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Model Hamiltonians parametrized by Kohn-Sham density functional theory.

机译:由Kohn-Sham密度泛函理论参数化的模型哈密顿量。

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We have developed a semiempirical method using a model Hamiltonian based on the Energy Weighted Maximum Overlap (EWMO) formalism. We introduced adjustable parameters in to the EWMO formula and fitted them to MO energies calculated by Kohn-Sham Density Functional Theory (KS-DFT). Our goal is to reproduce the molecular orbital (MO) energies of KS-DFT at a small fraction of the KS-DFT computational cost. The only integrals that we calculate are overlap integrals and the most time-consuming step in our calculation is to do a single diagonalization of a valence-only Hamiltonian matrix.; This method was applied to small silicon clusters Sin, n = 10 to 16 and polysilanes H3Si-(SiH2)n-SIH 3. We evaluated the performance of the method by analyzing the HOMO-LUMO gap and density of states (DOS). For Si10, the HOMO-LUMO gap calculated by the semiempirical method was reproduced with a root mean square (RMS) deviation of 0.29 eV compared to KS-DFT. For the Si11 to Si16 clusters, the gap was reproduced with an average (RMS) error of 0.24 eV. For polysilane, we investigated the effect of chain length, backbone conformation, substituents and removal of hydrogens on the HOMO-LUMO gap and DOS using both KS-DFT and the semiempirical method. In each case, the model was able to reproduce the KS-DFT HOMO-LUMO gaps relatively well. The semiempirical method was also used to simulate the effect of dopants and of an electric field on the polysilane chain to demonstrate possible future applications.
机译:我们使用基于能量加权最大重叠量(EWMO)形式主义的哈密顿量模型开发了一种半经验方法。我们在EWMO公式中引入了可调整的参数,并将其拟合到由Kohn-Sham密度泛函理论(KS-DFT)计算的MO能量。我们的目标是以较小的KS-DFT计算成本重现KS-DFT的分子轨道(MO)能量。我们计算的唯一积分是重叠积分,并且计算中最耗时的步骤是对仅化合价的哈密顿矩阵进行单对角化。该方法适用于小的硅团簇Si n ,n = 10至16和聚硅烷H 3 Si-(SiH 2 n -SIH 3 。我们通过分析HOMO-LUMO间隙和状态密度(DOS)评估了该方法的性能。对于Si 10 ,通过半经验方法计算出的HOMO-LUMO间隙与KS-DFT相比,均方根(RMS)偏差为0.29 eV。对于Si 11 到Si 16 簇,该间隙以0.24 eV的平均(RMS)误差再现。对于聚硅烷,我们使用KS-DFT和半经验方法研究了链长,主链构象,取代基和氢对HOMO-LUMO间隙和DOS的影响。在每种情况下,该模型都能较好地再现KS-DFT HOMO-LUMO的缺口。半经验方法还用于模拟掺杂剂和电场对聚硅烷链的影响,以证明可能的未来应用。

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