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Electrical detection of the spin Hall effect in ferromagnet-semiconductor heterostructures.

机译:铁磁体-半导体异质结构中自旋霍尔效应的电学检测。

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摘要

This thesis describes the effects of spin-orbit coupling on electron transport in Fe/ InxGa1-xAs heterostructures. Spin-orbit coupling is a relativistic phenomenon that couples the spin of an electron to its momentum by means of a momentum-dependent effective magnetic field. The spin-orbit coupling in bulk InxGa 1-xAs is determined by measuring the direct spin Hall effect. In the direct spin Hall effect, an applied charge current induces a spin current due to spin-orbit coupling. The spin current flows in a direction that is perpendicular to the charge current, with a spin orientation that is perpendicular to the flow direction of both the charge current and the spin current. The spin Hall effect leads to an out-of-plane spin accumulation that is opposite in sign at opposite edges of the channel.;Lateral Fe/InxGa1-xAs devices are fabricated using standard semiconductor processing techniques. The interface between the Fe and InxGa 1-xAs is a highly doped Schottky tunnel barrier for efficient electrical spin injection and detection. Measurements of the spin valve and Hanle effect are performed in the non-local geometry to confirm that the Fe electrodes are sensitive to spin polarization in the InxGa 1-xAs channel and its dephasing by precession in an applied magnetic field. The spin accumulation due to the spin Hall effect is identified through the observation of a Hanle effect in the Hall voltage measured by pairs of ferromagnetic contacts at the channel edges. The data are fit using a model which includes spin diffusion, precession, and relaxation. We use the parameters determined from the fit to calculate the spin Hall conductivity. We find that the magnitude of the spin Hall conductivity is in agreement with models of the extrinsic SHE due to ionized impurity scattering. By analyzing the dependence of the spin Hall signal on channel conductivity we determine the contributions of both skew and side jump scattering to the total spin Hall conductivity. We calculate that the spin-orbit coupling parameter is larger than predicted by standard k ˙ p perturbation theory.
机译:本文描述了自旋轨道耦合对Fe / InxGa1-xAs异质结构中电子传输的影响。自旋轨道耦合是一种相对论性现象,它通过依赖于动量的有效磁场将电子的自旋耦合到其动量。 InxGa 1-xAs体中的自旋轨道耦合通过测量直接自旋霍尔效应确定。在直接自旋霍尔效应中,由于自旋轨道耦合,施加的电荷电流会感应自旋电流。自旋电流沿垂直于充电电流的方向流动,其自旋方向垂直于充电电流和自旋电流的流动方向。自旋霍尔效应导致面外自旋累积,其在沟道的相对边缘处的符号相反。;横向Fe / InxGa1-xAs器件是使用标准半导体加工技术制造的。 Fe和InxGa 1-xAs之间的界面是高掺杂的肖特基隧道势垒,用于高效电自旋注入和检测。在非局部几何结构中对自旋阀和Hanle效应进行测量,以确认Fe电极对InxGa 1-xAs通道中的自旋极化及其因进动磁场的进动而移相敏感。通过观察由通道边缘的成对铁磁触点测量的霍尔电压中的汉乐效应,可以确定由于自旋霍尔效应引起的自旋积累。使用包括自旋扩散,进动和张弛的模型拟合数据。我们使用从拟合确定的参数来计算自旋霍尔电导率。我们发现,由于离子化的杂质散射,自旋霍尔电导率的大小与非本征SHE的模型一致。通过分析自旋霍尔信号对通道电导率的依赖性,我们确定了偏斜和侧跳散射对总自旋霍尔电导率的贡献。我们计算出自旋轨道耦合参数大于标准k点的预测值。 p摄动理论。

著录项

  • 作者

    Garlid, Eric Scott.;

  • 作者单位

    University of Minnesota.;

  • 授予单位 University of Minnesota.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2010
  • 页码 153 p.
  • 总页数 153
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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