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Experimental and numerical investigation of the thermomechanical response of reticles during the optical lithography process.

机译:光刻过程中标线的热机械响应的实验和数值研究。

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摘要

Optical lithography is the primary commercial method for manufacturing integrated circuit (IC) chips in 2003, but it may be replaced by other technologies due to its physical limitations on the minimum feature size. Currently, optical technology is able to produce ICs with 90 nm minimum feature size. The demand for faster ICs continuously drives down the feature size on these microchips. To extend the optical lithography technology to produce chips with feature sizes of 65 nm or 45 nm, all mask (reticle) related distortions must be minimized. The reticle expansion due to thermal loading caused by the exposing illumination causes a considerable distortion to the mask.; Building correct numerical models to simulate the thermomechanical response during the optical lithography process is the main objective of this research. Three dimensional finite element (FE) models were developed to predict the thermal response and the corresponding structural response of the reticle during the exposure process. Experimental model verifications of the thermal FE models were performed with three sets of experiments. The experimental model verification program was initiated with a simple experiment, and the complexity was increased step-by-step for the proceeding experiments. For each experiment, the light source was calibrated to estimate the heat flux delivered and the heat loss coefficient for each configuration. FE models were developed to replicate each experiment. The comparison between the experimental and the numerical results showed a good agreement.; As a conclusion of this work, it has been shown that the thermal FE models developed to simulate the thermal response of the reticles during the optical lithography exposure process are credible. Therefore the FE models were used for predicting the thermomechanical distortion of the optical reticles during exposure for current and future technologies in close collaboration with the IC industry members.
机译:光刻技术是2003年制造集成电路(IC)芯片的主要商业方法,但由于其对最小特征尺寸的物理限制,它可能会被其他技术取代。当前,光学技术能够生产最小特征尺寸为90 nm的IC。对更快的IC的需求不断降低了这些微芯片的功能尺寸。为了扩展光学光刻技术以生产特征尺寸为65 nm或45 nm的芯片,必须使所有与掩模(掩模版)相关的失真最小化。由于曝光引起的热负荷导致的掩模版膨胀导致掩模相当大的变形。建立正确的数值模型来模拟光刻过程中的热机械响应是本研究的主要目的。开发了三维有限元(FE)模型以预测光罩在曝光过程中的热响应和相应的结构响应。通过三组实验对热有限元模型进行了实验模型验证。通过简单的实验启动了实验模型验证程序,并且为进行中的实验逐步增加了复杂性。对于每个实验,对光源进行校准以估计每种配置的传递的热通量和热损失系数。开发了FE模型来复制每个实验。实验结果与数值结果的比较表明吻合良好。作为这项工作的结论,已经表明开发的用于模拟光罩曝光过程中光罩热响应的热FE模型是可信的。因此,有限元模型用于与IC行业成员密切合作,预测当前和未来技术在曝光过程中光学掩模版的热机械变形。

著录项

  • 作者

    Abdo, Amr Yehia.;

  • 作者单位

    The University of Wisconsin - Madison.;

  • 授予单位 The University of Wisconsin - Madison.;
  • 学科 Engineering Mechanical.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 250 p.
  • 总页数 250
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 机械、仪表工业;
  • 关键词

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