首页> 外文学位 >Low power and high performance circuit design for process scalability.
【24h】

Low power and high performance circuit design for process scalability.

机译:低功耗和高性能电路设计,可实现过程可扩展性。

获取原文
获取原文并翻译 | 示例

摘要

The increasing prominence of portable systems and the need to limit power consumption and hence, heat dissipation in very high density VLSI chips have led to rapid and innovative developments in low power design recently.; In this thesis, we discuss major sources of power dissipation in VLSI systems, and present new low power design techniques on the technology and circuit level. We present a low power 1.85GHz 32-bit CLA adder using Dual Path All-N-Logic; We introduces leakage-proof domino circuit design for deep sub-100nm technologies, which can suppress both subthreshold leakage and gate leakage in standby mode; We describe a four-phase keeper design for high fan-in dynamic gates. Non-full swing switching at the keeper gate together with alleviated contention help to reduce power consumption and delay; We present a new domino failure mechanism in deep sub-100nm technologies and its solution; We propose a new Clock Delayed N-P Dynamic Logic, and apply it to a 32-bit carry lookahead adder with an improved sparse tree structure; We introduce a current mode multi-level simultaneous bidirectional I/O scheme for chip-to-chip Communications. The current mode scheme is faster and consumes less power by reducing the voltage swing on the transmission line between two chips.
机译:便携式系统的重要性日益提高,以及限制功耗的需求,因此,超高密度VLSI芯片的散热问题导致了低功耗设计的快速创新发展。在本文中,我们讨论了VLSI系统中功耗的主要来源,并在技术和电路层面上提出了新的低功耗设计技术。我们提出了一种使用双路全N逻辑的低功耗1.85GHz 32位CLA加法器。我们针对深度低于100nm的技术引入了防漏电多米诺电路设计,可以在待机模式下抑制亚阈值漏电和栅极漏电。我们描述了一种用于高扇入动态门的四相保持器设计。保持器门上的非全幅开关以及缓解的竞争有助于减少功耗和延迟;我们提出了一种在深亚100nm技术中的新的多米诺骨牌失效机制及其解决方案。我们提出了一种新的时钟延迟N-P动态逻辑,并将其应用于具有改进的稀疏树结构的32位进位超前加法器。我们介绍了一种用于芯片间通信的电流模式多级同时双向I / O方案。通过减小两个芯片之间的传输线上的电压摆幅,电流模式方案更快并且消耗更少的功率。

著录项

  • 作者

    Yang, Ge.;

  • 作者单位

    University of California, Santa Cruz.;

  • 授予单位 University of California, Santa Cruz.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 132 p.
  • 总页数 132
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号