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Charge exchange collisions of hydrogen atoms and ions with laboratory surfaces.

机译:氢原子和离子与实验室表面的电荷交换碰撞。

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摘要

Scattering and negative ion formation processes have been investigated for the atomic hydrogen projectiles (H, H+, H) incident on polycrystalline Cu and Cu(100) surfaces with kinetic energies in the range of 25 to 200 eV. Hydrogen beams were directed to the target surfaces at a fixed incident angle of 18° from the surface plane, and an electrostatic energy analyzer was used to record the energy distributions of backscattered ions within the plane of incidence. Experiments were performed in a high vacuum system with an ultimate pressure of approximately 10 −9 mbar, resulting in efficient adsorption of H2O molecules on the target surfaces. The total H ion yield per incident H atom was dependent on the surface conditions and was typically around 0.5% at room temperature for all energies investigated. Energy loss analysis of the resulting H ions indicated that the electron capture process occurs directly through the valence electrons of adsorbed gases, rather than via resonant transitions of conduction electrons from the Cu surface. Measurements performed with incident H+ and H ions demonstrated a suppressed neutralization as compared to clean metals, resulting in image potential effects amounting to approximately 3 to 4 eV. In contrast to the H+ experiments, incident H ions yielded a second contribution of backscattered ions that were reflected directly from the adsorbed layer without losing memory of the initial charge state. These incident charge state effects are attributed to the dielectric and wide band gap insulating properties of an adsorbed H 2O layer.
机译:研究了具有动能入射在多晶Cu和Cu(100)表面上的氢原子弹(H,H + ,H -)的散射和负离子形成过程。在25至200 eV的范围内。氢束以与水平面成18°的固定入射角射向目标表面,并使用静电能量分析仪记录入射平面内反向散射离子的能量分布。实验是在高真空系统中进行的,其极限压力约为10 -9 mbar,从而有效地将H 2 O分子吸附在目标表面上。每个入射的H原子的总H超离子产量取决于表面条件,对于所有研究的能量,在室温下通常约为0.5%。生成的H -离子的能量损失分析表明,电子捕获过程直接通过吸附气体的价电子发生,而不是通过导电电子从Cu表面的共振跃迁发生。与干净的金属相比,使用入射H + 和H -离子进行的测量显示抑制了中和作用,导致图像电势效应大约为3-4 eV。与H + 实验相反,入射的H -离子产生了背散射离子的第二种贡献,这些背散射离子直接从吸附层反射而不会丢失初始电荷状态的记忆。这些入射电荷状态效应归因于吸附的H 2 O层的介电和宽带隙绝缘性能。

著录项

  • 作者

    DeFazio, Jeffrey N.;

  • 作者单位

    University of Denver.;

  • 授予单位 University of Denver.;
  • 学科 Physics Atomic.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 p.259
  • 总页数 156
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 分子物理学、原子物理学;
  • 关键词

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