首页> 外文学位 >Heat and power management for high-performance integrated circuits.
【24h】

Heat and power management for high-performance integrated circuits.

机译:高性能集成电路的热量和电源管理。

获取原文
获取原文并翻译 | 示例

摘要

Among all the issues that CMOS scaling has faced, increased power consumption in general and leakage power in particular are among the most important issues that the VLSI designers have to address. Due to the strong correlation between power consumption and operating temperature, increased power consumption compromises the reliability, functionality and performance of the circuits, either during chip normal operating condition or during test and reliability screening. Thermal modeling of high-performance circuits and systems is a crucial factor in order to achieve reliable and power-saving designs. The VLSI community currently lacks a way to model temperature at any level of design other than low-level circuits. The accuracy of thermal modeling has a substantial effect on the accuracy of thermal management studies of the processor architecture. Without this essential modeling capability, architecture researchers are limited to inaccurate estimation techniques, which will not be suitable for the thermal management of high performance circuits. In this thesis some of these issues are discussed and new models and associated CAD tools are developed. Various techniques at the circuit and system levels are explored.; In this thesis, a technique for junction temperature estimation is developed. Using this technique, the increase in the normalized junction temperature with scaling under nominal and burn-in conditions was predicted. This thesis also provide a new insight into the concept of thermal runaway and how it may best be avoided. Finally an electro-thermal tool was developed to study the low temperature operation of the high performance processors, while incorporating different techniques at circuit, and system levels. In this tool all the physical parameters of the chip at device, circuit and system level was incorporated and the tool was calibrated to an actual microprocessor.
机译:在CMOS缩放所面临的所有问题中,总体上功耗的增加,尤其是泄漏功率是VLSI设计人员必须解决的最重要的问题。由于功耗与工作温度之间存在很强的相关性,因此在芯片正常工作条件下或在测试和可靠性筛选期间,功耗的增加会损害电路的可靠性,功能和性能。高性能电路和系统的热建模是实现可靠和节能设计的关键因素。 VLSI社区目前缺乏在除底层电路以外的任何设计水平上对温度进行建模的方法。热建模的准确性对处理器体系结构的热管理研究的准确性有重大影响。如果没有这种基本的建模能力,架构研究人员将只能使用不准确的估算技术,这些估算技术将不适用于高性能电路的热管理。本文讨论了其中的一些问题,并开发了新的模型和相关的CAD工具。在电路和系统级别上探索了各种技术。本文提出了一种结温估算技术。使用这种技术,可以预测标称和老化条件下归一化结温随结垢的增加。本文还为热失控的概念以及如何最好地避免它提供了新的见解。最终,开发了一种电热工具来研究高性能处理器的低温操作,同时在电路和系统级采用不同的技术。在该工具中,器件,电路和系统级别的芯片的所有物理参数都已合并,并且已针对实际微处理器进行了校准。

著录项

  • 作者

    Vassighi, Arman.;

  • 作者单位

    University of Waterloo (Canada).;

  • 授予单位 University of Waterloo (Canada).;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 126 p.
  • 总页数 126
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号