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Polythiophene, oligothiophene, and thiophene interfaces and their applications for electronic devices.

机译:聚噻吩,低聚噻吩和噻吩的界面及其在电子设备中的应用。

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摘要

This thesis includes research topics related to oligo- and polythiophenes and thiophene containing alkanethiols. These comprise an important class of molecules with important organic device applications, including light-emitting diodes, photovoltaics, field-effect transistors, and sensors.; A novel means of lithographically forming fluorescent oligothiophene patterns is demonstrated. MgKalpha X-ray and low energy electron irradiation of 3-hexylthiophene monomer condensed on clean gold at 145 K results in formation of an organic photoluminescent film that does not desorb when the sample is warmed to room temperature. C 1s and S 2p X-ray photoelectron spectra (XPS) of the X-ray and electron-formed films are similar to those of chemically-synthesized poly(3-hexylthiophene). Ultraviolet photoelectron spectroscopy (UPS) indicates the presence of thiophene ring electronic states, consistent with retention of conjugation. UPS spectra of 3-hexylthiophene monomer and beam-formed films have been compared with theoretically simulated density-of-states spectra of 3-hexylthiophene, thiophene, bithiophene, terthiophene, and quaterthiophene. The radiation-induced changes in the 3-hexylthiophene UPS valence spectra are explained by delocalization of electrons along the oligomer backbone. Comparison of the experimental UPS and simulated spectra suggests that the average conjugation length of the beam-formed films is less than six. Photoluminescence measurements show that the excitation maxima for the X-ray- and electron-formed samples are 350 and 405 nm, respectively, with corresponding emission maxima of 430 and 525 nm, indicating that the films are oligomeric rather than polymeric. This is consistent with the UPS results. Electron bombardment with 5 keV electrons results in films of micron thickness, as determined by profilometry. The ability to lithographically oligomerize the monomer is demonstrated by forming a dot with an electron beam. FTIR spectroscopy of electron-formed films shows vibrations consistent with the formation of linearly oligomerized 3-hexylthiophene. Fluorescence and atomic force microscopies of electron-formed samples show the presence of oligomerized 3-hexylthiophene islands residing on a less fluorescent organic background. (Abstract shortened by UMI.)
机译:本论文包括与低聚噻吩和聚噻吩以及含噻吩的链烷硫醇有关的研究主题。这些包括具有重要有机装置应用的重要一类分子,包括发光二极管,光伏,场效应晶体管和传感器。平板印刷形成荧光寡聚噻吩图案的一种新型手段得到证明。 MgKalpha X射线和在145 K冷凝在纯金上的3-己基噻吩单体的低能电子辐照导致形成有机光致发光膜,当样品升温至室温时,该膜不会脱附。 X射线和电子形成膜的C 1s和S 2p X射线光电子能谱(XPS)与化学合成的聚(3-己基噻吩)相似。紫外光电子能谱(UPS)表示存在噻吩环电子状态,与共轭保持一致。已将3-己基噻吩单体和束状薄膜的UPS光谱与3-己基噻吩,噻吩,联噻吩,对噻吩和四噻吩的理论模拟的态密度光谱进行了比较。 3-己基噻吩UPS价谱中辐射引起的变化通过电子沿低聚物主链的离域化来解释。实验UPS和模拟光谱的比较表明,束膜的平均共轭长度小于6。光致发光测量表明,X射线和电子形成样品的激发最大值分别为350和405 nm,相应的发射最大值为430和525 nm,表明该膜是低聚物而不是聚合物。这与UPS的结果一致。用轮廓分析法测定,用5 keV电子轰击电子可产生微米厚度的薄膜。通过用电子束形成点来证明光刻低聚单体的能力。电子形成膜的FTIR光谱显示出与线性低聚的3-己基噻吩形成一致的振动。电子形成的样品的荧光和原子力显微镜检查表明存在低聚有机背景的低聚3-己基噻吩岛。 (摘要由UMI缩短。)

著录项

  • 作者

    Ahn, Heejoon.;

  • 作者单位

    University of Massachusetts Lowell.;

  • 授予单位 University of Massachusetts Lowell.;
  • 学科 Chemistry Analytical.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 176 p.
  • 总页数 176
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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