Physical Mechanism and Fundamental Performance Limits on Graphene Non-Volatile Memory Technologies.

摘要

Non-volatile memory (NVM) constitutes a vital portion in electronics to retain information for both archiving and data processing. Limitations encountered in flash technology upon increasing density and reducing cost by scaling necessitates alternative memory structures beyond complementary-metal-oxide-semiconductor (CMOS). The single atomic two-dimensional profile and the superior physical properties of graphene allow advancements in a variety of memory metrics when implemented into several types of memory architectures. In this dissertation, two prototype NVM memory technologies: graphene floating-gate flash memory and graphene ferroelectric memory is thoroughly analyzed and the performance advancements and challenges that arise compared to its predecessors are discussed.