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Terahertz frequency multipliers.

机译:太赫兹倍频器。

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摘要

The goal of this research is to explore the use of frequency multipliers to produce a practical source for frequencies near 1 THz. For this research frequency triplers to 300GHz using heterostructure barrier varactors (HBV) have been designed, fabricated and tested. Because of the symmetric C-V characteristics of HBV, only odd harmonic frequency radiations are produced and no DC bias is needed. This makes HBV tripler design inherently easier than for a Schottky diode tripler. Also, due to the stackable barrier structure of HBV diodes, large power handling ability can be achieved by just stacking more barrier layers vertically instead of putting more diodes in series like Schottky diode frequency multipliers. To date we have fabricated several batches of whisker contacted, discrete planar and integrated HBV diodes for tripling to 300 GHz (WR-3 band). These have allowed us to study the design trade-offs and perfect the fabrication processes. The resulting integrated triplers have yielded tripling efficiency to 300 GHz that is on par with the best reported in the literature. At the output frequency of 300 GHz, output power of 3.9 mW with 4.5% conversion efficiency was measured with an Erickson power meter (output power of 5.8 mW with 6.7% conversion efficiency was measured with an Anritsu WR-3 power meter).; In addition, frequency quintuplers to 210 GHz using discrete HBV diodes were also designed and tested, and the state of the art performance was obtained.; Although HBV diodes have several advantages over Schottky diodes, our research has also revealed some of their weaknesses. We decided to develop the first InGaAs Schottky triplers to WR-1.2 band using this new circuit design. An integrated anti-parallel InGaAs low barrier Schottky diode circuit on GaAs was successfully fabricated and the state of art performance was obtained. At the output frequency of 769 GHz, output power of 245 μW with at least 1% conversion efficiency was measured with an Erickson power meter. (Abstract shortened by UMI.)
机译:这项研究的目的是探索使用倍频器为1 THz附近的频率产生实用的信号源。对于本研究,已经设计,制造和测试了使用异质结构势垒变容二极管(HBV)的三倍频至300GHz。由于HBV具有对称的C-V特性,因此只产生奇次谐波辐射,而无需直流偏置。这使得HBV三极管设计从本质上比肖特基二极管三极管更容易。同样,由于HBV二极管具有可堆叠的势垒结构,通过仅垂直堆叠更多的势垒层而不是像肖特基二极管倍频器那样串联更多的二极管,可以实现大功率处理能力。迄今为止,我们已经制造了几批晶须接触,离散平面和集成式HBV二极管,可将其倍增至300 GHz(WR-3频段)。这些使我们能够研究设计权衡并完善制造工艺。最终的集成三路器产生了高达300 GHz的三倍效率,这与文献中报道的最好效率相当。在300 GHz的输出频率下,使用Erickson功率计测量了3.9 mW的输出功率,转换效率为4.5%(使用Anritsu WR-3功率计测量了5.8 mW的输出功率,转换效率为6.7%)。此外,还设计并测试了使用分立HBV二极管的210 GHz频率五倍频器,并获得了最新的性能。尽管HBV二极管相对于肖特基二极管具有多个优点,但我们的研究还揭示了它们的一些缺点。我们决定使用这种新的电路设计开发出第一个InGaAs肖特基三倍频器,使其达到WR-1.2频段。成功地在GaAs上制造了一个集成的反并联InGaAs低势垒肖特基二极管电路,并获得了最先进的性能。在输出频率为769 GHz的情况下,使用Erickson功率计测量了245μW的输出功率,转换效率至少为1%。 (摘要由UMI缩短。)

著录项

  • 作者

    Duan, Yiwei.;

  • 作者单位

    University of Virginia.;

  • 授予单位 University of Virginia.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 102 p.
  • 总页数 102
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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