Multi-scale reflection modulator-based optical interconnects.

摘要

This dissertation describes the design, analysis, and experimental validation of micro- and macro-optical components for implementing optical interconnects at multiple scales for varied applications. Three distance scales are explored: millimeter, centimeter, and meter-scales. At the millimeter-scale, we propose the use of optical interconnects at the intra-chip level. With the rapid scaling down of CMOS critical dimensions in accordance to Moore's law, the bandwidth requirements of global interconnects in microprocessors has exceeded the capabilities of metal links. These are the wires that connect the most remote parts of the chip and are disproportionately problematic in terms of chip area and power consumption. Consequently, in the mid-2000s, we saw a shift in the chip architecture: a move towards multicore designs. However, this only delays the inevitable communication bottleneck between cores. To satisfy this bandwidth, we propose to replace the global metal interconnects with optical interconnects. We propose to use the hybrid integration of silicon with GaAs/AlAs-based multiple quantum well devices as optical modulators and photodetectors along with polymeric waveguides to transport the light. We use grayscale lithography to fabricate curved facets into the waveguides to couple light into the modulators and photodetectors.;Next, at the chip-to-chip level in high-performance multiprocessor computing systems, communication distances vary from a few centimeters to tens of centimeters. An optical design for coupling light from off-chip lasers to on-chip surface-normal modulators is proposed in order to implement chip-to-chip free-space optical interconnects. The method uses a dual-prism module constructed from prisms made of two different glasses. The various alignment tolerances of the proposed system are investigated and found to be well within pick-and-place accuracies. For the off-chip lasers, vertical cavity surface emitting lasers (VCSELs) are proposed. The rationale behind using on-chip modulators rather than VCSELs is to avoid VCSEL thermal loads on chip, and because of higher reliability of modulators than VCSELs. Particularly above 10Gbps, an empirical model developed shows the rapid decrease of VCSEL median time to failure vs. data rate. Thus the proposed interconnect scheme which utilizes continuous wave VCSELs that are externally modulated by on-chip multiple quantum well modulators is applicable for chip-to-chip optical interconnects at 20Gbps and higher line data rates.;Finally, for applications such as remote telemetry, where the interrogation distances can vary from a few meters to tens or even hundreds of meters we demonstrate a modulated retroreflector that utilizes InGaAs/InAlAs-based large-area multiple quantum well modulators on all three faces of a retroreflector. The large-area devices, fabricated by metalorganic chemical vapor deposition, are characterized in terms of the yield and leakage currents. A yield higher than that achieved previously using devices fabricated by molecular beam epitaxy is observed. The retroreflector module is constructed using standard FR4 printed circuit boards, thereby simplifying the wiring issue. A high optical contrast ratio of 8.23dB is observed for a drive of 20V. A free-standing PCB retroreflector is explored and found to have insufficient angular tolerances (+/-0.5 degrees). We show that the angular errors in the corner-cube construction can be corrected for using off-the-shelf optical components as opposed to mounting the PCBs on a precision corner cube, as has been done previously.