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Novel carbosilane containing polymers: Synthesis, characterization and applications.

机译:新型含碳硅烷的聚合物:合成,表征和应用。

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摘要

Cyclolinear carbosilane polymers with disilacyclobutane (DSCB) rings in the main chain structure were prepared by means of acyclic diene metathesis (ADMET) polymerization of the corresponding 1,3-dibutenyl-1,3-disilacyclobutanes. The copolymerization of a monomer of this type with a non-cyclic organosilane diene allowed for the incorporation of a varying number of DSCB rings into the polymer backbone. Subsequent hydrogenation of the double bonds with p-toluenesulfonhydrazide resulted in a saturated hydrocarbon structure in the main chain without affecting the DSCB ring. All of the resultant polymers are well-defined materials with a DSCB ring incorporated into the backbone structure, as evidenced by NMR spectroscopy and GPC analyses. The thermal behavior of these polymers was characterized by DSC and TGA. DSC indicated low Tgs and TGA evidenced high thermal stability in an inert atmosphere. In addition, large exothermic peaks were observed in the DSC, which indicated, along with the IR and Solid State 29Si NMR spectra, that crosslinking occurs during heating to ca. 250°C via opening of the imbedded DSCB rings.; The dielectric constant of the dense, fully crosslinked polymer is quite low (2.37), which is substantially lower than that of any other known, non-fluorinated, non-porous, dielectric material. The dielectric constant of this material is also lower than the 2.6 effective dielectric constant value that is currently targeted for the next two generations of integrated circuits. Furthermore, we have found that the thermally induced crosslinking of this cyclolinear polycarbosilane is initiated at a considerably lower temperature (ca. 160°C) on a copper metal surface than on a Si or glass surface (ca. 250°C). This allows the selective coating of Cu by this electrically insulating, chemically inert, and thermally stable polymer, which has the potential for use as a dielectric material that will not require the use of a separate barrier layer to prevent Cu diffusion or, if desired, as a separate Cu barrier layer in conjunction with another dielectric material.; Poly(methyltolylsilylenemethylene), the carbosilane analog of poly(alpha, p-dimethylstyrene), dimethylstyrene), was prepared by transition-metal catalyzed ring-opening polymerization of the corresponding monomer 1,3-dimethyl-1,3-ditolyl-1,3-disilacyclobutane. Subsequent partial bromination of this polymer provided a useful macroinitiator. Styrene grafting from this macroinitiator was performed by atom transfer radical polymerization (ATRP). Preliminary results showed that the graft copolymers derived from macroinitiator 1 have no microscopic phase separation due to the low molecular weight of the PS grafts; while the graft copolymers derived from macroinitiator 2 can be used to prepare phase separated polymer nanocomposites.
机译:通过相应的1,3-二丁烯基-1,3-二硅环丁烷的无环二烯复分解(ADMET)聚合反应,制备了在主链结构中具有二硅环丁烷(DSCB)环的线性碳硅烷聚合物。这种类型的单体与非环状有机硅烷二烯的共聚反应允许将不同数量的DSCB环引入到聚合物主链中。随后用对甲苯磺酰肼对双键进行氢化,在主链中产生饱和烃结构,而不影响DSCB环。所有得到的聚合物都是定义明确的材料,其中DSCB环并入了骨架结构,这已通过NMR光谱学和GPC分析证明。这些聚合物的热行为通过DSC和TGA表征。 DSC显示低Tgs,TGA证明在惰性气氛中具有高热稳定性。另外,在DSC中观察到大的放热峰,这表明与IR和固态29Si NMR光谱一起,在加热至约200℃时发生交联。 250°C通过打开嵌入式DSCB环。致密的,完全交联的聚合物的介电常数非常低(2.37),大大低于任何其他已知的非氟化,无孔介电材料的介电常数。该材料的介电常数也低于当前有效的介电常数值2.6,这是当前下一代集成电路的目标。此外,我们发现,该环线性聚碳硅烷的热诱导交联是在铜金属表面上的温度(比硅或玻璃表面(约250°C))低得多的温度(约160°C)下引发的。这允许通过这种电绝缘,化学惰性和热稳定的聚合物选择性地涂覆Cu,该聚合物具有用作电介质材料的潜力,不需要使用单独的阻挡层来防止Cu扩散,或者,如果需要,作为与另一种介电材料结合的单独的铜阻挡层。聚(甲基甲苯基甲硅烷基亚甲基),即聚(α,对二甲基苯乙烯),二甲基苯乙烯的碳硅烷类似物,是通过相应的单体1,3-二甲基-1,3-二甲苯基-1的过渡金属催化的开环聚合反应制得的, 3-二硅环丁烷。该聚合物的随后部分溴化提供了有用的大分子引发剂。通过原子转移自由基聚合(ATRP)从该大分子引发剂接枝苯乙烯。初步结果显示,由于PS接枝的分子量低,衍生自大分子引发剂1的接枝共聚物没有微观相分离。衍生自大分子引发剂2的接枝共聚物可用于制备相分离的聚合物纳米复合材料。

著录项

  • 作者

    Wu, Zhizhong.;

  • 作者单位

    Rensselaer Polytechnic Institute.;

  • 授予单位 Rensselaer Polytechnic Institute.;
  • 学科 Chemistry Polymer.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 174 p.
  • 总页数 174
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 高分子化学(高聚物);工程材料学;
  • 关键词

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