Growth and characterization of gallium indium nitrogen arsenide and gallium indium nitrogen phosphide.

摘要

Nitrogen incorporation into GaInAs and GaInP based on GaAs (100) substrates has attracted a great deal of attention due to their potential applications in ultra-high-efficiency multijunction solar cells as well as in optoelectronic devices. In order to investigate not yet well-studied material families of III-N-V compounds, we use gas-source molecule beam epitaxy (MBE) method, in which nitrogen radicals are used as the nitrogen precursor, to grow mixed group-V nitride alloy semiconductors with excellent crystallinity.; This dissertation is divided into two major parts. In the first part, we use different structures to improve GaInNAs material quality, including strain-compensated GaIn0.08As/GaN0.03As and strained InAs/GaN0.03As0.97 short-period superlattices (SPSLs). The photoluminescence intensity of the SPSLs is 12 times higher than that of random alloys, while electron mobility is improved by a factor of two. InAs/GaN0.03As0.97 SPSL is very promising for 1.3 mum GaInNAs quantum well laser application. Photoconductance measurements show a type-II band lineup for the Ga0.92In0.08As/GaN 0.03As0.97 heterojunction.; In the second part, we demonstrate the successful growth of a novel material, GaInNP. Fundamental optical and electrical transport properties of GaInNP are studied. Nitrogen incorporation dramatically reduces the GalnP band gap, which can be successfully explained by the band anticrossing model based on the concept of an anticrossing interaction between localized N states and the extended conduction band states. Rapid thermal annealing improves the optical properties, but decreases the free electron concentration because Si dopant is passivated by N through the formation of Si-N pairs. Band alignment between GaInNP and GaAs is also investigated. GaInNP is an ideal material for tunnel-collector heterojunction bipolar transistors (HBTs). In comparing the properties of GaInNP and GaInNAs, great similarities are found in terms of the effect of nitrogen incorporation. Here, the band anticrossing model successfully explains the band gap reduction and predicts an increase of the electron effective mass for both material.