Study of the ferroelectric inverter and SRAM cell.

摘要

A ferroelectric transistor is just a traditional metal-oxide semiconductor field-effect transistor (MOSFET) with a ferroelectric layer between the gate and oxide and thus has different characteristics than that of a traditional MOSFET. Hysteresis, nonlinearity, and spontaneous polarization are just a few of the unique characteristics related to the ferroelectric field-effect transistor (FeFET) and are presented in further detail. These unique properties and characteristics associated with the FeFET are examined for both the resistive load inverter and static random access memory (SRAM) cell circuit configurations. The effect of varying resistance, voltage, and frequency is examined based on empirical data. An Excel model was developed to verify the current-voltage (I-V) results from the empirical data for the transistor, inverter, and SRAM cell while another Excel model was developed to verify the retention data for the SRAM cell.