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Study of pulsed terahertz wave emission and detection from III-V and II-VI materials.

机译:研究脉冲太赫兹波发射以及从III-V和II-VI材料进行检测。

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摘要

Pulsed terahertz (THz) wave technology that utilize ultrafast laser for THz wave generation and detection has been developing for decades. In this dissertation we will study several types of semiconductors for the purpose of powerful THz wave generation and broadband THz wave detection.; Bulk semiconductor materials have been demonstrated to generate pulsed THz waves primarily by one of two processes: optical rectification (second order nonlinear effect) or ultrafast transport of charged carriers. There are also several methods using semiconductors as the pulsed THz wave detectors. In this dissertation we focus on studying the THz wave detection by EO sampling.; The THz wave from a n-type GaAs can be enhanced by growing Beryllium (Be)-doped low-temperature-grown (LTG) GaAs layers on the surface of bulk GaAs. The modified structure can radiate THz transients with power four times greater than reference emitters without LTG GaAs layers.; Both our calculation and experiments of THz wave radiation from InAs wafers irradiated with femtosecond pulses indicate that a wafer with a low carrier concentration is better as a THz wave source than another with a high carrier concentration.; ZnTe crystals have been the most widely used emitters and sensors of THz pulses at far-IR range. Our research of the generation and detection of THz waves from (110)-oriented ZnxCd1-xTe crystals indicate the optimum composition is x = 0.05 with a Ti:sapphire laser.; GaSe crystals were studied for the broadband detection of THz waves. The THz electric field amplitude measured with a GaSe crystal exceeds that detected by a ZnTe crystal with comparable detection bandwidth. The ultra-broadband THz spectrum generated and detected with a 10 mum crystal has reached 100 THz.; The above studies of THz wave emitters and detectors provide advanced solutions toward high power generation, sensitive detection and broad THz wave spectrum. These results will significantly benefit the modern applications of pulsed THz wave technology.
机译:利用超快激光产生和检测太赫兹的脉冲太赫兹(THz)波技术已经发展了数十年。本文将研究几种类型的半导体,以实现强大的太赫兹波产生和宽带太赫兹波检测。已证明块状半导体材料主要通过以下两种过程之一产生脉冲THz波:光学整流(二阶非线性效应)或带电载流子的超快传输。还有几种使用半导体作为脉冲太赫兹波检测器的方法。本文重点研究了电光采样对太赫兹波的检测。可以通过在整体GaAs的表面上生长掺有铍(Be)的低温生长(LTG)GaAs层来增强n型GaAs的THz波。改进的结构可以发射THz瞬变,其功率是没有LTG GaAs层的参考发射器的四倍。我们对飞秒脉冲辐照过的InAs晶片产生的THz波辐射的计算和实验均表明,载流子浓度低的晶片作为THz波形源比载流子浓度高的晶片更好。 ZnTe晶体已成为在远红外范围内使用最广泛的THz脉冲的发射器和传感器。我们从(110)取向ZnxCd1-xTe晶体产生和检测THz波的研究表明,使用Ti:蓝宝石激光器的最佳成分为x = 0.05。研究了GaSe晶体用于太赫兹波的宽带检测。用GaSe晶体测得的THz电场幅度超过了具有相当检测带宽的ZnTe晶体所测得的THz电场幅度。用10毫米晶体产生和检测到的超宽带太赫兹光谱已达到100太赫兹。对太赫兹波发射器和探测器的上述研究为高功率产生,灵敏的检测和宽广的太赫兹波谱提供了先进的解决方案。这些结果将大大有益于脉冲太赫兹波技术的现代应用。

著录项

  • 作者

    Liu, Kai.;

  • 作者单位

    Rensselaer Polytechnic Institute.;

  • 授予单位 Rensselaer Polytechnic Institute.;
  • 学科 Physics Optics.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 98 p.
  • 总页数 98
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 光学;
  • 关键词

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