首页> 外文学位 >Impact of secondary barriers on copper-indium-gallium-selenide solar-cell operation.
【24h】

Impact of secondary barriers on copper-indium-gallium-selenide solar-cell operation.

机译:次级势垒对铜铟镓硒化物太阳能电池运行的影响。

获取原文
获取原文并翻译 | 示例

摘要

Thin-film solar cells based on CuInSe2 (CIS) absorber with a band gap of Eg = 1.0 eV and also based on CuIn1-x GaxSe2 (CIGS) alloy absorbers with a band-gap range of Eg = 1.0--1.67 eV are investigated in this work. Intermediate "buffer" semiconductor layers in p-n junctions of CIGS solar cells often improve photodiode properties of the devices. The primary goal of the thesis is to study secondary barriers in the conduction band at the buffer/absorber interface, which may limit current transport and thus reduce the efficiency of the solar cells. The secondary goal is to explore alternative wide-bandgap buffers in CIGS cell structures. CIGS cells with standard CdS buffer layers, and alternative ZnS(O,OH) and InS(O,OH) buffer layers were studied.; CdS/CuIn1-xGaxSe2 solar cells with variable Ga content have a range of conduction-band offsets (DeltaEc) in the junction from moderately positive (spike offsets) in CdS/CuInSe2 to moderately negative (cliff offsets) in CdS/CuGaSe 2. Moderate conduction-band spikes in CdS/CIS and low-Ga CdS/CIGS are expected to cause distortions in diode current-voltage (J-V) curves of such solar cells under "red" illumination (hnu Eg(buffer)); no J-V distortions are expected for high-Ga CdS/CIGS with cliff offsets. These predictions were confirmed in experiments: the distortions were absent for cells with Eg above 1.2--1.3 eV, at which CdS/CIGS DeltaE c is near zero. Experiments and numerical simulations showed that one approach to reduce secondary barriers and J-V distortions in low-Ga high-spike cells is to thin the buffer layer(s).; Blue photons (hnu above Eg(buffer)) in the solar spectrum induce photoconductivity in the otherwise compensated buffers, which also results in lowering of the secondary barriers. It was shown that CIGS cells with CdS, InS(O,OH), and ZnS(O,OH) buffers have a similar response to "blue" photons: J-V distortion, if present under red light, is reduced or entirely disappears with blue-light exposure within minutes. The distortion re-appearance without blue light is the order of a thousand times slower.; Using wider-gap buffers, such as InS(O,OH) and ZnS(O,OH), was shown to produce higher photocurrents in solar cells. This photocurrent improvement is a central direction in the effort of further increasing efficiencies of thin-film solar cells.
机译:研究了基于带隙为Eg = 1.0 eV的CuInSe2(CIS)吸收体以及带隙范围为Eg = 1.0--1.67 eV的CuIn1-x GaxSe2(CIGS)合金吸收体的薄膜太阳能电池在这项工作中。 CIGS太阳能电池的p-n结中的中间“缓冲”半导体层通常会改善器件的光电二极管性能。本文的主要目的是研究缓冲/吸收体界面处导带中的次级势垒,这可能会限制电流传输,从而降低太阳能电池的效率。次要目标是探索CIGS细胞结构中的替代宽带隙缓冲液。研究了具有标准CdS缓冲层以及ZnS(O,OH)和InS(O,OH)缓冲层的CIGS电池。 Ga含量可变的CdS / CuIn1-xGaxSe2太阳能电池在结中的导带偏移范围从CdS / CuInSe2中的正正(尖峰偏移)到CdS / CuGaSe 2中的负负(陡峭偏移)。预期CdS / CIS和低Ga CdS / CIGS中的导带尖峰会导致这种太阳能电池在“红色”照明下的二极管电流-电压(JV)曲线失真(hnu

著录项

  • 作者

    Pudov, Alexei O.;

  • 作者单位

    Colorado State University.;

  • 授予单位 Colorado State University.;
  • 学科 Physics Condensed Matter.; Energy.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 107 p.
  • 总页数 107
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 能源与动力工程;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号