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Domain coarsening in electroconvection dynamics of topological defects in the striped system.

机译:带状系统中拓扑缺陷的电对流动力学中的域粗化。

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摘要

The goal of this research is to understand domain coarsening behavior in anisotropic pattern forming systems. While uniform systems are widely studied theoretically and experimentally, coarsening dynamics in striped system is less understood. In this thesis, our focus is to study topological defect motions as a probe to understand domain growth in striped systems. Three experimental results are reported in this thesis.; Ch. 4 describes the impacts of wavenumbers in coarsening dynamics. A series of quenches with various modulated frequencies is applied to the travelling pattern. The resulting striped standing pattern is varied to have various values of the average wavenumber in the background. The results exhibit a complex dynamics of domain coarsening under an influence of modulated frequencies. Using total wall length, L as a scaling variable, the exponents were measured. The exponents range from 0.25 to 0.6. Experiments in shows complex dynamics of background average wavenumber and measurements of domain sizes.; In Ch. 5, N4 liquid crystals were used for electroconvection. The pattern has two oblique rolls, zig and zag. Two different types of domain walls are observed: a regular grain boundary and a wall consisting of dislocations. Regular grain boundaries form parallel to the direction of director. Walls of dislocations form perpendicular to director. We observe dislocation dynamics contributing to the domain coarsening dynamics. In the late time of coarsening, dislocations moving parallel to the direction of director annihilate with each other. This dynamics result in anisotropic coarsening behavior. This experiment motivated us to conduct further experiments for understanding of dislocation dynamics.; Ch. 6 is a report on the experimental results of outlining domain growth affected by two different quench depths. In Ch. 6, numbers of dislocations and the total domain walls were measured with two different quench values, &egr; = 0.02 and &egr; = 0.05. For a smaller quench value &egr; = 0.02, both numbers of dislocations and total domain walls decrease monotonically, though the images taken at the end of experiment does not show that the domains have coarsened to the maximum size. For a bigger quench depth &egr; = 0.05, numbers of dislocations and total domain walls do not decrease. Two measurements suggest the possible pinning effect in the striped system. Though further work is required, results reported in Ch. 6 agree with the simulation [1].
机译:这项研究的目的是了解各向异性图案形成系统中的区域粗化行为。尽管在理论上和实验上对均匀系统进行了广泛研究,但对条纹系统中的粗化动力学却知之甚少。在本文中,我们的重点是研究拓扑缺陷运动,以了解条纹系统中域的增长。本文报道了三个实验结果。频道图4描述了波数对粗化动力学的影响。将具有各种调制频率的一系列骤冷应用于行进模式。改变所得的条纹站立图案以在背景中具有各种平均波数值。结果表明,在调制频率的影响下,域粗化的复杂动态。使用总壁长L作为比例变量,测量指数。指数范围从0.25到0.6。中的实验显示了背景平均波数和域尺寸测量的复杂动态。在Ch。如图5所示,将N4液晶用于对流。该图案有两个斜卷,曲折和曲折。观察到两种不同类型的畴壁:规则的晶界和由位错组成的壁。规则的晶界形成平行于指向矢的方向。位错墙垂直于导向器。我们观察到位错动力学有助于域粗化动力学。在粗化的后期,与导向器方向平行移动的位错彼此消失。这种动力学导致各向异性的粗化行为。这个实验激励我们进行进一步的实验,以了解位错动力学。频道图6是关于概述受两个不同淬灭深度影响的畴生长的实验结果的报告。在Ch。如图6所示,用两个不同的淬灭值&egr;测量位错数和总畴壁。 = 0.02且&egr; = 0.05。对于较小的淬灭值&egr; = 0.02时,位错数和总畴壁都单调减少,尽管在实验结束时拍摄的图像并未显示出畴已粗化到最大大小。对于更大的淬火深度&egr; = 0.05,位错数和总畴壁不减少。两次测量表明在条纹系统中可能存在钉扎效应。尽管还需要进一步的工作,但结果已在第6同意仿真[1]。

著录项

  • 作者

    Kamaga, Carina.;

  • 作者单位

    University of California, Irvine.;

  • 授予单位 University of California, Irvine.;
  • 学科 Physics Fluid and Plasma.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 107 p.
  • 总页数 107
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 等离子体物理学;
  • 关键词

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