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Fatigue analysis of micro-electro-mechanical systems (MEMS) resonators.

机译:微机电系统(MEMS)谐振器的疲劳分析。

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摘要

In view of recent rapid developments in micromachine devices, there is a growing need to obtain information about fatigue mechanisms at scales relevant to MEMS devices. Such information is of paramount importance to the development of more durable MEMS devices. To investigate the evolution of fatigue damages at the microscale, novel polysilicon fatigue resonators were designed, fabricated, and tested under multiaxial loading, which is a typical loading condition of most MEMS devices. Although this work includes design, fabrication, analysis and testing of the fatigue resonators, this dissertation is focused on analytical and finite element studies of the fatigue resonators. Detailed investigation of the fabrication and testing of the resonators were covered in the papers and theses of my colleagues on this work, Xiantian Sun and Carolyn D. White.; A preliminary stress analysis for the second and third generation fatigue resonators was performed first. Based on the obtained stress and strain field, fourth generation resonators were proposed and fabricated to generate sufficiently high stresses to initiate fatigue. On the other hand, to utilize the available third generation fatigue devices, notches were introduced by a focused ion beam (FIB) to generate high stresses around the notch root. The maximum equivalent von Mises stress resulting from the notches was calculated using the theoretical stress concentration factor. Experimental data obtained with notched specimens are also presented.; Because the fatigue resonators were tested in resonance to initiate fatigue damage, the dynamic characteristics of the resonators are of great importance. The finite element method (FEM) was first employed to analyze the dynamic response of the fatiguing resonators. However, it requires excessive computational time to reach the steady-state. Consequently, a more efficient analytical method based on a simplified second-order differential equation was introduced, and its results were found to be in good agreement with those obtained from the computationally-expensive FEM. With the aid of this analytical method, the nonlinear dynamic behavior of the fatigue resonators was analyzed to determine the effects of damping ratio, loading, and geometry on the dynamic response of the fatigue specimens.; In order to study the fatigue mechanisms of polycrystalline silicon at the microscale, it is essential to have a clear understanding of the variation of the stresses in MEMS devices resulting from different textures. (Abstract shortened by UMI.)
机译:鉴于微机械装置的近来快速发展,越来越需要以与MEMS装置有关的尺度获得关于疲劳机理的信息。这样的信息对于开发更耐用的MEMS器件至关重要。为了在微观尺度上研究疲劳损伤的演变,设计,制造和测试了新型的多晶硅疲劳谐振器,该谐振器是多轴加载的条件,这是大多数MEMS器件的典型加载条件。尽管这项工作包括疲劳谐振器的设计,制造,分析和测试,但本文还是着重于疲劳谐振器的分析和有限元研究。谐振器的制造和测试的详细研究在我的同事的论文和论文中进行了介绍,孙先天和Carolyn D. White。首先对第二代和第三代疲劳谐振器进行了初步的应力分析。基于获得的应力和应变场,提出并制造了第四代谐振器,以产生足够高的应力来引发疲劳。另一方面,为了利用可用的第三代疲劳装置,通过聚焦离子束(FIB)引入了切口,以在切口根部周围产生高应力。使用理论应力集中系数计算出由缺口产生的最大等效冯·米塞斯应力。还提供了带有缺口样品的实验数据。因为疲劳共振器已经过共振测试以引发疲劳损伤,所以共振器的动态特性非常重要。首先采用有限元方法(FEM)来分析疲劳谐振器的动态响应。但是,需要大量的计算时间才能达到稳态。因此,引入了一种基于简化的二阶微分方程的更有效的分析方法,发现其结果与从计算昂贵的有限元方法获得的结果非常一致。借助这种分析方法,分析了疲劳共振器的非线性动力学行为,以确定阻尼比,载荷和几何形状对疲劳试样动力响应的影响。为了从微观角度研究多晶硅的疲劳机理,必须清楚地了解不同纹理导致的MEMS器件应力变化。 (摘要由UMI缩短。)

著录项

  • 作者

    Xu, Rui.;

  • 作者单位

    University of California, Berkeley.;

  • 授予单位 University of California, Berkeley.;
  • 学科 Engineering Mechanical.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 143 p.
  • 总页数 143
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 机械、仪表工业;
  • 关键词

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