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Hydrogen in the Semiconducting Oxides Tin Oxide and Titanium Oxide Studied by FTIR Spectroscopy.

机译:FTIR光谱研究半导电氧化物中的氢氧化锡和氧化钛。

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摘要

In this study, hydrogen-containing defects in two semiconducting metal oxides, SnO2 and TiO2, have been investigated by FTIR spectroscopy. Transparent conducting oxides are unusual but highly useful materials that combine transparency in the visible range with electrical conductivity. With these unique properties, applications utilizing these materials have been continuously growing in several fields, such as display technology, solar cells, and optoelectronics.;Defects or impurities in the crystal structure of transparent conducting oxides affect the properties of these materials. Although hydrogen is the simplest atom, as an impurity, it plays remarkable roles in the electrical and optical properties of metal oxides. For example, recent research has suggested that hydrogen centers are responsible for the n-type conductivity in many metal oxides, in contrast to the traditionally accepted idea that native defects, such as oxygen vacancies and cation interstitials, are the source of conductivity. In order to utilize transparent conducting oxides to their highest potential, the conductivity needs to be controlled and engineered. However, a modern understanding of the conductivity of transparent conducting oxides and the role played by hydrogen is still at an early stage. In this study, IR spectroscopy experiments have been performed to probe the structures and reaction of hydrogen related centers and their relationship to changes in the conductivity of SnO 2 and TiO2.;In SnO2, the relationship between H and the free carriers it introduces has been investigated. The thermal stability of the free carrier absorption and its relationship to the thermal stabilities of the O-H lines have been examined. Distinctive polarization properties of several O-H centers have been used to test microscopic defect models. Temperature dependent interactions between electrically active and inactive defects have been identified by annealing studies.;Studies of TiO2 have focused on the fundamental O-D center and the strong dependence of its vibrational spectrum on temperature. The behavior of three closely spaced O-D lines have been studied by IR spectroscopy and theory and explained with a small polaron model.
机译:在这项研究中,已通过FTIR光谱法研究了两种半导体金属氧化物SnO2和TiO2中的含氢缺陷。透明导电氧化物是不寻常的但非常有用的材料,它将可见光范围的透明性与导电性结合在一起。凭借这些独特的性能,利用这些材料的应用在显示技术,太阳能电池和光电子学等领域不断发展。透明导电氧化物晶体结构中的缺陷或杂质会影响这些材料的性能。尽管氢是最简单的原子,但作为杂质,它在金属氧化物的电和光学性质中起着举足轻重的作用。例如,最近的研究表明,氢中心是许多金属氧化物中n型导电性的原因,这与传统上公认的固有缺陷(如氧空位和阳离子间隙)是导电性的来源相反。为了利用透明的导电氧化物达到其最高电位,需要控制和设计导电率。然而,对透明导电氧化物的导电性和氢所起的作用的现代理解仍处于早期阶段。在这项研究中,进行了红外光谱实验,以探索氢相关中心的结构和反应,以及它们与SnO 2和TiO2的电导率变化的关系。调查。已经研究了自由载流子吸收的热稳定性及其与O-H线的热稳定性的关系。几个O-H中心的独特偏振特性已用于测试微观缺陷模型。通过退火研究已经确定了电活性缺陷和非活性缺陷之间的温度依赖性相互作用。TiO2的研究集中于基本的O-D中心及其振动光谱对温度的强烈依赖性。通过红外光谱和理论研究了三条间隔很近的O-D线的行为,并用小的极化子模型进行了解释。

著录项

  • 作者

    Bekisli, Figen.;

  • 作者单位

    Lehigh University.;

  • 授予单位 Lehigh University.;
  • 学科 Physics.;Condensed matter physics.;Atomic physics.;Inorganic chemistry.
  • 学位 Ph.D.
  • 年度 2013
  • 页码 179 p.
  • 总页数 179
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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