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Chemical modification of polymeric surfaces to promote wettability and reactivity.

机译:聚合物表面的化学改性,可提高润湿性和反应性。

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摘要

For the past few years, low-k dielectric polymers have had a major impact on the advanced integrate circuit technologies. Their potential use as interlayer dielectric combined with a low resistivity metal as the conducting line (e.g. copper) in interconnects can reduce the resistivity-capacity delay. However, in order to successfully integrate copper and low-k dielectrics for further use, it is first necessary to understand the interfacial interaction between copper and low-k dielectric.; This thesis work presents a systematic study with the primary goal of improving the polymer surface wettability and reactivity. Two hydrocarbon polymers, SiLK(TM) and Parylene, were used in this study, and the polymer surfaces were modified by either acid or plasma treatments. The change of surface morphology and surface chemistry due to the treatment was analyzed by atomic force microscopy (AFM) and x-ray photoelectron spectroscopy (XPS), respectively. A significant decrease of water droplet contact angle after the surface treatment reveals that the polymer surface wettability increases. It is found that the main factor in reducing the water droplet contact angle is the formation of oxygen and/or nitrogen functional groups on the polymer surface rather than an increase in the polymer surface roughness. The plasma treatment introduces a larger amount of functional groups onto the polymer surface than the acid treatment. The SiLK's crosslink structure is better withstanding the plasma force than the Parylene's linear polymer. Consequently, there are larger amounts of functional groups formed on the SILK surface than on the Parylenc surface.; An additional study reveals that the formation of functional groups on the polymer surface also increases the polymer surface reactivity and allows Tetrasulfide self-assembled monolayer growth on the treated polymer surfaces. The existence of functional groups and Tetrasulfide moiety markedly improves the copper interfacial interaction. It was observed that copper undergoes a reaction with oxygen functional groups, nitrogen functional groups and Tetrasulfide moiety. Further study of metallorganic Cu(hfac)2 adsorption indicates that the existence of functional groups on the plasma-treated polymer surface significantly enhances the Cu(hfac)2 chemisorption onto the polymer surface. The Cu(hfac)2 self-limiting growth behavior remains after it is adsorbed onto the polymer surface.
机译:在过去的几年中,低k介电聚合物对先进的集成电路技术产生了重大影响。它们潜在地用作与互连中的低电阻率金属(例如铜)结合的低电阻率金属的层间电介质可减少电阻率-容量延迟。然而,为了成功地集成铜和低k电介质以进一步使用,首先必须了解铜和低k电介质之间的界面相互作用。本文的工作提出了系统的研究,其主要目的是提高聚合物表面的润湿性和反应性。在这项研究中使用了两种烃聚合物,SiLK TM和聚对二甲苯,并且通过酸或等离子体处理对聚合物表面进行了改性。通过原子力显微镜(AFM)和X射线光电子能谱(XPS)分别分析了由于处理而引起的表面形态和表面化学变化。表面处理后水滴接触角的显着降低表明聚合物表面的润湿性增加。发现减小水滴接触角的主要因素是在聚合物表面上形成氧和/或氮官能团,而不是增加聚合物表面粗糙度。与酸处理相比,等离子体处理将更多的官能团引入聚合物表面。与聚对二甲苯的线性聚合物相比,SiLK的交联结构能更好地承受等离子体力。因此,在SILK表面上形成的官能团比在Parylenc表面上形成的官能团要大。另一项研究表明,在聚合物表面上形成官能团还可以提高聚合物表面反应性,并允许四硫化物自组装单层在处理过的聚合物表面上生长。官能团和四硫键部分的存在显着改善了铜的界面相互作用。观察到铜与氧官能团,氮官能团和四硫键部分发生反应。进一步研究金属有机金属对Cu(hfac)2的吸附表明,在经过等离子体处理的聚合物表面上存在官能团会显着增强Cu(hfac)2在聚合物表面上的化学吸附。 Cu(hfac)2自限生长行为在吸附到聚合物表面后仍然存在。

著录项

  • 作者

    Pimanpang, Samuk.;

  • 作者单位

    Rensselaer Polytechnic Institute.;

  • 授予单位 Rensselaer Polytechnic Institute.;
  • 学科 Chemistry Polymer.; Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 97 p.
  • 总页数 97
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 高分子化学(高聚物) ;
  • 关键词

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