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Carbon nanosheets and carbon nanotubes by RF PECVD.

机译:碳纳米片和碳纳米管通过RF PECVD。

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摘要

A planar antenna RF plasma enhanced chemical vapor deposition apparatus was built for carbon nanostructure syntheses. When operated in inductive and capacitive plasma discharging modes, two carbon nanostructures, carbon nanotube (CNT) and carbon nanosheet (CNS), were synthesized, respectively.; A nanosphere lithography method was developed and used to prepare catalyst patterns for CNT growth. Using capacitively coupled C 2H2/NH3 plasma, randomly oriented CNT were synthesized on Ni dot patterned Si substrates. Aligned CNT arrays were grown on SiO 2 coated Si substrates, using both C2H2/NH 3 and CH4/H2 capacitive plasmas.; When operated in inductive coupling mode, CNS were successfully deposited on a variety of substrates without any catalyst. Carbon nanosheets are a novel two-dimensional structure, have smooth surface morphologies and atomically thin edges, and are free-standing roughly vertical to substrate surfaces. CNS have a defective graphitic crystalline structure, and contain only C and H elements. Typical CNS growth parameters are 680°C substrate temperature, 40% CH4 in H2, 900 W RF power, and 100 mTorr total gas pressure. Morphology, growth rate, and structure of CNS change with the variations in the growth parameters. Increasing substrate temperature yields a less smooth morphology, a faster growth rate, and more defects in CNS; increasing CH4 concentration causes a faster growth rate and more defects in CNS, but only slightly changes the morphology; increasing RF power results in a more smooth morphology, a faster growth rate, and less defects in CNS; and decreasing total gas pressure induces a less smooth morphology, a faster growth rate, and more defects in CNS.; In CNS growth mechanism, a base layer forms underneath the vertical sheets; the growth of CNS is through growth species surface diffusion; the electric field near substrate surfaces promotes and keeps the vertical orientation of the CNS, and the atomic hydrogen etching keeps the CNS atomically thin.; Carbon nanosheets have large surface areas, and can stabilize metal thin films into particles 3-5 nm in diameters. For field emission testing, typical CNS have turn-on fields of 5-10 V/mum, a maximum emission current of 28 mA, an emission current density of 2 mA/mm2, and a life-time of 200 hours.
机译:建立了用于碳纳米结构合成的平面天线RF等离子体增强化学气相沉积设备。当以电感和电容等离子体放电模式操作时,分别合成了两个碳纳米结构,即碳纳米管(CNT)和碳纳米片(CNS)。开发了一种纳米球光刻方法,并将其用于制备用于CNT生长的催化剂图案。使用电容耦合的C 2H2 / NH3等离子体,在Ni点图案化的Si衬底上合成了随机取向的CNT。对准的CNT阵列使用C 2 H 2 / NH 3和CH4 / H2电容性等离子体在SiO 2涂覆的Si衬底上生长。当以感应耦合模式操作时,CNS可以成功地沉积在各种基材上而无需任何催化剂。碳纳米片是一种新颖的二维结构,具有光滑的表面形态和原子薄边缘,并且大致垂直于基材表面自立。 CNS具有缺陷的石墨晶体结构,仅包含C和H元素。典型的CNS生长参数是680°C基板温度,H2中40%CH4、900 W射频功率和100 mTorr总气压。 CNS的形态,生长速率和结构随着生长参数的变化而变化。基板温度升高会产生较不光滑的形态,更快的生长速率以及更多的CNS缺陷。 CH4浓度增加会导致CNS更快的生长速度和更多的缺陷,但仅会稍微改变形态。 RF功率的增加导致形态更加平滑,生长速度更快并且CNS中的缺陷更少;降低总气体压力会导致较不光滑的形态,更快的生长速率以及更多的CNS缺陷。在中枢神经系统的生长机制中,在垂直薄片的下方形成了一个基础层;中枢神经系统的生长是通过生长物种的表面扩散;基板表面附近的电场促进并保持了CNS的垂直方向,原子氢蚀刻使CNS保持原子薄。碳纳米片具有较大的表面积,并且可以将金属薄膜稳定成直径为3-5 nm的颗粒。对于场发射测试,典型的CNS具有5-10 V / mum的导通场,最大28 mA的发射电流,2 mA / mm2的发射电流密度以及200小时的使用寿命。

著录项

  • 作者

    Zhu, Mingyao.;

  • 作者单位

    The College of William and Mary.;

  • 授予单位 The College of William and Mary.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 187 p.
  • 总页数 187
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 O49;
  • 关键词

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