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Colloidal Quantum Dot Based Photonic Circuits and Devices.

机译:基于胶体量子点的光子电路和器件。

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摘要

Colloidal quantum dots have desirable optical properties which can be exploited to realize a variety of photonic devices and functionalities. However, colloidal dots have not had a pervasive utility in photonic devices because of the absence of patterning methods. The electronic chip industry is highly successful due to the well-established lithographic procedures. In this thesis we borrow ideas from the semiconductor industry to develop lithographic techniques that can be used to pattern colloidal quantum dots while ensuring that the optical properties of the quantum dots are not affected by the process. In this thesis we have developed colloidal quantum dot based waveguide structures for amplification and switching applications for all-optical signal processing. We have also developed colloidal quantum dot based light emitting diodes.;We successfully introduced CdSe/ZnS quantum dots into a UV curable photo-resist, which was then patterned to realize active devices. In addition, "passive" devices (devices without quantum dots) were integrated to "active" devices via waveguide couplers. Use of photo-resist devices offers two distinct advantages. First, they have low scattering loss and secondly, they allow good fiber to waveguide coupling efficiency due to the low refractive index which allows for large waveguide cross-sections while supporting single mode operation. Practical planar photonic devices and circuits incorporating both active and passive structures can now be realized, now that we have patterning capabilities of quantum dots while maintaining the original optical attributes of the system.;In addition to the photo-resist host, we also explored the incorporation of colloidal quantum dots into a dielectric silicon dioxide and silicon nitride one-dimensional microcavity structures using low temperature plasma enhanced chemical vapor deposition. This material system can be used to realize microcavity light emitting diodes that can be realized on any substrate. As a proof of concept demonstration we show a 1550 nm emitting all-dielectric vertical cavity structure embedded with PbS quantum dots. Enhancement in spontaneous emission from the dots embedded in the microcavity is also demonstrated.
机译:胶体量子点具有理想的光学特性,可用于实现各种光子器件和功能。然而,由于缺乏构图方法,胶体点在光子器件中尚未普及。由于完善的光刻工艺,电子芯片行业取得了巨大成功。在本文中,我们借鉴了半导体行业的想法,开发了可用于对胶体量子点进行构图的光刻技术,同时确保了量子点的光学特性不受工艺影响。在本文中,我们开发了基于胶体量子点的波导结构,用于全光信号处理的放大和切换应用。我们还开发了基于胶体量子点的发光二极管。;我们成功地将CdSe / ZnS量子点引入了可紫外固化的光刻胶中,然后对其进行了图案化以实现有源器件。此外,“无源”设备(无量子点的设备)通过波导耦合器集成到“有源”设备。使用光刻胶设备有两个明显的优势。首先,它们具有较低的散射损耗,其次,由于折射率低,因此它们允许良好的光纤到波导耦合效率,这允许大的波导横截面,同时支持单模操作。现在,在保持系统原始光学属性的同时,我们还具有量子点的图案化功能,可以实现结合了有源和无源结构的实用平面光子器件和电路。除了光致抗蚀剂主机之外,我们还探索了使用低温等离子体增强化学气相沉积将胶体量子点结合到介电二氧化硅和氮化硅一维微腔结构中。该材料系统可用于实现可在任何基板上实现的微腔发光二极管。作为概念证明,我们展示了嵌入PbS量子点的1550 nm发射全电介质垂直腔结构。还证明了嵌入微腔中的点的自发发射增强。

著录项

  • 作者

    Okoye, Nicky E.;

  • 作者单位

    City University of New York.;

  • 授予单位 City University of New York.;
  • 学科 Engineering Electronics and Electrical.;Physics Quantum.;Nanotechnology.
  • 学位 Ph.D.
  • 年度 2014
  • 页码 98 p.
  • 总页数 98
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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