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Etude fondamentale des mecanismes de gravure par plasma de materiaux de pointe: Application a la fabrication de dispositifs photoniques.

机译:先进材料的等离子刻蚀机理的基础研究:在光子器件制造中的应用。

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摘要

Advances in electronics and photonics critically depend upon plasma-based materials processing either for transferring small lithographic patterns into underlying materials (plasma etching) or for the growth of high-quality films. This thesis deals with the etching mechanisms of materials using high-density plasmas. The general objective of this work is to provide an original framework for the plasma-material interaction involved in the etching of advanced materials by putting the emphasis on complex oxides such as SrTiO3, (Ba,Sr)TiO 3 and SrBi2Ta2O9 films.;Based on a synthesis of the descriptions proposed by different authors to explain the etching characteristics of simple materials in noble and halogenated plasma mixtures, we propose comprehensive rate models for physical and chemical plasma etching processes. These models have been successfully validated using experimental data published in literature for Si, Pt, W, SiO2 and ZnO. As an example, we have been able to adequately describe the simultaneous dependence of the etch rate on ion and reactive neutral fluxes and on the ion energy.;From an exhaustive experimental investigation of the plasma and etching properties, we have also demonstrated that the validity of the proposed models can be extended to complex oxides such as SrTiO3, (Ba,Sr)TiO 3 and SrBi2Ta2O9 films. We also reported for the first time physical aspects involved in plasma etching such as the influence of the film microstructural properties on the sputter-etch rate and the influence of the positive ion composition on the ion-assisted desorption dynamics. Finally, we have used our deep investigation of the etching mechanisms of STO films and the resulting excellent control of the etch rate to fabricate a ridge waveguide for photonic device applications.;Keywords: plasma etching, sputtering, adsorption and desorption dynamics, high-density plasmas, plasma diagnostics, advanced materials, photonic applications.
机译:电子学和光子学的进步主要取决于基于等离子体的材料处理,以将小的光刻图案转移到下面的材料中(等离子体蚀刻)或高质量薄膜的生长。本文探讨了利用高密度等离子体刻蚀材料的机理。这项工作的总体目标是通过重点研究诸如SrTiO3,(Ba,Sr)TiO 3和SrBi2Ta2O9薄膜等复杂氧化物,为涉及先进材料蚀刻的等离子体与材料相互作用提供一个原始框架。综合不同作者提出的描述以解释贵金属和卤化等离子体混合物中简单材料的蚀刻特性的描述,我们提出了物理和化学等离子体蚀刻工艺的综合速率模型。这些模型已使用文献中发表的有关Si,Pt,W,SiO2和ZnO的实验数据成功验证。例如,我们已经能够充分描述蚀刻速率对离子和反应性中性通量以及离子能量的同时依赖性。;通过对等离子体和蚀刻特性的详尽实验研究,我们还证明了有效性所提出的模型可以扩展到诸如SrTiO3,(Ba,Sr)TiO 3和SrBi2Ta2O9薄膜的复合氧化物。我们还首次报道了等离子体刻蚀所涉及的物理方面,例如膜微结构特性对溅射刻蚀速率的影响以及正离子组成对离子辅助解吸动力学的影响。最后,我们对STO膜的蚀刻机理进行了深入研究,并对蚀刻速率进行了出色的控制,从而制造出了用于光子器件应用的脊形波导。关键词:等离子体蚀刻,溅射,吸附和解吸动力学,高密度等离子,等离子诊断,先进材料,光子应用。

著录项

  • 作者

    Stafford, Luc.;

  • 作者单位

    Universite de Montreal (Canada).;

  • 授予单位 Universite de Montreal (Canada).;
  • 学科 Physics Condensed Matter.;Physics Fluid and Plasma.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 214 p.
  • 总页数 214
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 等离子体物理学;
  • 关键词

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