Alloys containing antimony as metamorphic buffer layer for device applications.

摘要

This work explores the stress/strain relaxation kinetics in metamorphic buffer layers of GaAs1-xSbx/GaAs (001) grown by molecular beam epitaxy. The real-time stress/strain evolution was obtained using an in situ multi-beam optical sensor measurement, and combined with detailed analysis from x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Several distinct stages of the strain relaxation were observed during growth of GaAs1-xSbx constant composition buffer layers, which are separated into three main regimes: pseudomorphic growth, fast strain relaxation and saturation. Constant composition layers of GaAs0.5Sb0.5/GaAs initially relax elastically followed by the rapid nucleation of both 60° and pure edge dislocations. The saturation regime is distinguished by coalescence of small islands that appears to trigger the formation of threading dislocations.; The strain relaxation profile for GaAs0.5Sb0.5, GaAs0.61Sb0.39, and In0.2Ga0.8As films were modeled using Dodson and Tsao's model of effective stress, with a new representation for elastic interactions of misfit dislocations. The model results agree with the experimental data and show that repulsive interaction of misfit dislocations is responsible for the large residual stress. Using this model, estimated line dislocation densities are in good agreement with the values obtained experimentally. This could have potential application in the design of metamorphic buffer layers because our observations are made in real time on individual growth, without the need of external characterization to measure the dislocation density. In addition, this model offers new insights in estimating the dislocation glide energy for simulation purposes.; Linearly graded GaAs1-xSbx films resulted in a decreased Sb incorporation, higher residual stress, and bifurcation in the tilt of the sample. Less aggressive grading resulted in more uniform incorporation and lower residual stress. Step graded films resulted in the lowest residual stress, and with threading dislocation density comparable to linearly graded films. The tilt in step graded films was reduced to zero by increasing pure edge misfit dislocation density with an increase in the Sb mole fraction. This could be of great impact for the development of metamorphic buffer layers because pure edge dislocations are sessile and relieved the stress more efficiently.