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Growth of germanium crystals by reacting gold with germane and selective gold removal.

机译:通过使金与锗烷反应并选择性去除金来生长锗晶体。

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摘要

Germanium crystal growth can be achieved by the vapor-liquid-solid (VLS) method in which the crystals grow from a metal solvent that is continuously saturated with germanium atoms by the decomposition of GeH4 at the surface of the metal solvent. This thesis explores controlling the growth of germanium crystals by reacting microscopic gold particles with GeH 4 such that electronic devices can be constructed from these microscopic germanium crystals.;Micrometer-size germanium crystals were grown by reacting electrodeposited gold, at the bottom of holes etched through a silicon oxide layer on a silicon substrate, with GeH4. These etched hole structures are called local crucibles and they determined the location of the germanium crystals. The size of the germanium crystals was determined by the amount of electrodeposited gold. X-ray diffraction from these germanium crystals shows that their crystal orientation is the same as the crystal orientation of the silicon substrate. The selectivity of germanium deposition onto gold particles versus onto the silicon oxide surface was increased by the addition of gaseous HCl during crystal growth.;Because gold can deleteriously affect electronic devices made from germanium, removal of the gold from germanium crystals grown from nanometer-size gold particles was explored. The removal of gold from these germanium crystals is particularly challenging because gold is a noble metal and germanium is known to be quite reactive. Liquid etchants that contain an iodine species and aqueous HC1 selectively removed the gold from these germanium crystals. Electron microscopy shows that all visible gold is removed from germanium crystals treated with these liquid etchants. Photoemission spectroscopy (PES) shows that the oxidation of germanium is minimized by the HCl in these liquid etchants. Inductively coupled plasma optical emission spectroscopy (ICP-OES) and inductively coupled plasma mass spectrometry (ICP-MS) were used to quantify the residual gold after germanium crystals were treated with the liquid etchants. These techniques show that a significant fraction (as much as 99%) of the gold was removed from the germanium crystals.
机译:锗晶体的生长可以通过汽-液-固(VLS)方法实现,在该方法中,晶体通过GeH4在金属溶剂表面的分解,从锗原子连续饱和的金属溶剂中生长出来。本文探索了通过使微观金颗粒与GeH 4反应来控制锗晶体的生长,从而可以从这些微观锗晶体构建电子器件的方法。微米尺寸的锗晶体是通过电沉积的金在蚀刻出的孔的底部反应而生长的用GeH4在硅衬底上形成一层氧化硅。这些蚀刻的孔结构称为局部坩埚,它们确定了锗晶体的位置。锗晶体的大小由电沉积金的量确定。从这些锗晶体的X射线衍射表明,它们的晶体取向与硅衬底的晶体取向相同。通过在晶体生长过程中添加气态HCl可以提高锗在金颗粒上相对于在氧化硅表面上的沉积选择性。;由于金会有害地影响由锗制成的电子设备,因此从纳米级的锗晶体中去除金探索了金颗粒。从这些锗晶体中去除金特别具有挑战性,因为金是一种贵金属,并且锗具有很强的反应性。包含碘物质和HCl水溶液的液体蚀刻剂选择性地从这些锗晶体中除去了金。电子显微镜显示,所有可见金都从用这些液体蚀刻剂处理过的锗晶体中去除。光发射光谱法(PES)表明,这些液体蚀刻剂中的HCl使锗的氧化作用最小化。电感耦合等离子体发射光谱法(ICP-OES)和电感耦合等离子体质谱法(ICP-MS)用于量化锗晶体用液体蚀刻剂处理后的残留金。这些技术表明,从锗晶体中去除了很大一部分金(多达99%)。

著录项

  • 作者

    Ratchford, Joshua Bryce.;

  • 作者单位

    Stanford University.;

  • 授予单位 Stanford University.;
  • 学科 Analytical chemistry.
  • 学位 Ph.D.
  • 年度 2008
  • 页码 102 p.
  • 总页数 102
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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