首页> 外文会议>Zinc Oxide Materials and Devices II; Proceedings of SPIE-The International Society for Optical Engineering; vol.6474 >Surface plasmon mediated emission from metal/ZnO: an example for the fabrication of high brightness top-emitting light emitting diodes
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Surface plasmon mediated emission from metal/ZnO: an example for the fabrication of high brightness top-emitting light emitting diodes

机译:金属/ ZnO的表面等离子体激元介导的发射:制造高亮度顶部发射发光二极管的示例

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摘要

In this study, we have attempted to enhance the forward emission from metal-capped ZnO mediated by surface plasmon (SP) cross coupling. By using metal alloys and dielectric grating, it is proposed that energy from ZnO can be resonantly coupled to metal/ZnO SPs, transferred to metal/grating SPs and then Bragg scattered to the free space. Although the experimental conditions are not yet been optimized, preliminary results from Al (30 nm) capped ZnO thin film show the forward/backward emission intensity ratio can be increased from 0.1 to 0.6 after the introduction of dielectric grating with periodicity of ~ 800nm on metal side. The ratio is compared favorably with the bare ZnO emission ratio of 0.5. It is thus believed SP cross coupling can be used for fabricating high brightness top-emitting light emitting diodes (LEDs).
机译:在这项研究中,我们试图增强由表面等离激元(SP)交叉耦合介导的金属盖的ZnO的正向发射。通过使用金属合金和介电光栅,提出了可以将来自ZnO的能量共振耦合到金属/ ZnO SPs,转移到金属/光栅SPs,然后布拉格散射到自由空间。尽管尚未优化实验条件,但铝(30 nm)覆盖的ZnO薄膜的初步结果表明,在金属上引入周期为〜800nm的介电光栅后,向前/向后的发射强度比可以从0.1增加到0.6侧。将该比率与0.5的裸ZnO发射比率有利地进行比较。因此,据信SP交叉耦合可用于制造高亮度顶部发射发光二极管(LED)。

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