Performance of a Silicon-based Solar cell at Elevated Temperatures: Analytical Modeling and Simulation

摘要

The temperature effect on short current ISH and open circuit voltage VOC of silicon solar cells is measured at medium and high levels of illumination is studied. The results are theoretically discussed. This paper describes further a computer model using artificial network. Within present predictions of the computer model show that 20 % efficiency can be achieved for based silicon concentrator solar cells if an appropriate cooling system is used in order to limit the temperature effect. Also, a simulation is done; it aims to give computational support for the general development of neural network (NN) which is a very powerful predictive modeling technique used to predict performances cell under solar concentration. The later study is done on p-n homojunction silicon- based solar cell.