Synthesis of Copper–Silicon Carbide Composite Powder by In Situ Processing

摘要

The in situ formation of silicon carbide (SiC) particles was investigated during reaction milling process. Initial starting powders of Cu, Si and C were used with a composition of Cu-0.7 wt% Si-0.3 wt% C which was corresponding to Cu-1 wt% SiC. A mixture of this powder system was milled in an argon atmosphere for four different durations, i.e., 12 h, 24 h, 36 h and 48 h. X-ray diffraction was used to verify the formation of SiC. The in situ formation of SiC in a copper matrix took place after the milling process and heat-treatment at 600 ℃. Longer milling time resulted in the formation of SiC phase with more intense X-ray diffraction peaks due to powder refinement.