InGaN/GaN Quantum Dots in Nanowires on Silicon (111) for Intermediate Band Solar Cells (WCPEC-7)

摘要

We present the growth of InGaN/GaN quantum dots in nanowire as solar cells on silicon (111) along with optical, electrical and morphological characterization of fabricated solar cells. Morphology of the nanowires is assessed using scanning electron microscopy. Diffuse and specular reflectivity of the nanowires are measured over the range of the solar spectrum for bare nanowires and fabricated nanowire solar cells. Quantum efficiency is measured as a function of wavelength and attributed to both band-to-band and sub-bandgap current generation. Micro-electroluminescence imaging suggests that much higher performance can be realized through improved nanowire uniformity.