FIB As a TEM Specimen Preparation Tool for III-V Compound Semiconductor Materials

机译：FIB作为用于III-V化合物半导体材料的TEM样品制备工具

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

TEM specimen preparation techniques using a focused ion-beam machine are described. Two main techniques known as trench and lift-out methods and their advantages/disadvantages are discussed. Some examples of TEM work on III-V compound semiconductor devices are presented.

机译：描述了使用聚焦离子束机的TEM样品制备技术。讨论了两种主要技术，即挖沟和提升方法及其优点/缺点。给出了III-V化合物半导体器件上TEM工作的一些示例。

著录项

来源
《The Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors and the Thirty Sixth State-Of-The-Art Program on Compound Semiconductors Symposia are held at the 200th Meeting of the Electrochemical Society, May 12-17, 2002, Philadelphia,》|2002年|p.276-285|共10页
会议地点 Philadelphia PA(US);Philadelphia PA(US);Philadelphia PA(US)
作者
Kultaransingh N. Hooghan; Shohei Nakahara; R. Privette; S. N. G. Chu;
展开▼
作者单位

Agere Systems 555 Union Blvd. Allentown, PA 18109;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. TEM investigation of FIB induced damages in preparation of metal material TEM specimens by FIB [J] . J. Yu, J. Liu, J. Zhang Materials Letters . 2006,第2期

机译：用FIB制备金属材料TEM样品时FIB引起的损伤的TEM研究
2. Recent development in a TEM specimen preparation technique using FIB for semiconductor devices [J] . Nakahara S. Surface & Coatings Technology . 2003,第0期

机译：使用FIB的TEM样品制备技术在半导体器件中的最新进展
3. Using FIB for TEM analysis of semiconductor materials [J] . Mary V. Moore, Steve Rozeveld, Elvin Beach Solid state technology . 2002,第Supplement期

机译：使用FIB进行半导体材料的TEM分析
4. FIB As a TEM Specimen Preparation Tool for III-V Compound Semiconductor Materials [C] . Kultaransingh N. Hooghan, Shohei Nakahara, R. Privette, International Symposia on State-of -the-Art Program on Compound Semiconductors . 2002

机译：FIB作为III-V复合半导体材料的TEM样品制备工具
5. Electronic defects of III-V compound semiconductor materials grown on metamorphic silicon-germanium substrates for photovoltaic applications. [D] . Gonzalez, Maria. 2009

机译：在变质硅锗衬底上生长的III-V族化合物半导体材料的电子缺陷，可用于光伏应用。
6. Cryo-FIB specimen preparation for use in a cartridge-type cryo-TEM [O] . Jie He, Chyongere Hsieh, Yongping Wu, -1

机译：用于盒式低温TEM的低温FIB样品制备
7. Specimen Preparation Methods with FIB for In-Situ TEM Observations in Materials Science
^^mdash;TEM Specimen Preparation by FIB with Glass Manipulator^^mdash; [O] . Toshiaki Suzuki, Yoshimasa Takahashi 2012

机译：具有FIB的样品制备方法，用于材料科学的原位TEM观测
^ ^ MDASH; FIB用玻璃机械手^ ^ mdash制备TEM样本;
8. Vapor Phase Growth System and Its Use in the Preparation of Several III-V Compound Semiconductors [R] . Enstrom, R. E., Miller, E. A., Sigai, A. G. 1971

机译：气相生长系统及其在几种III-V化合物半导体制备中的应用

FIB As a TEM Specimen Preparation Tool for III-V Compound Semiconductor Materials

摘要

著录项

相似文献

相关主题

期刊订阅