CVD diamond as dielectric material for capacitor applications

摘要

Diamond films synthesized using Microwave Plasma Chemical Vapor Deposition (MWCVD0 were evaluated for use as dielectric material for high power and high temperature capacvitors. The effect that the deposition parameters and annealing have on the frequency and temperature stability of the electronic properties was investigated. Dielectric constants ranging between 8.0 and 4.2 and resistivities between 1x10~8 ohm-cm and 5x10~(14) ohm-cm were obtained. Diamond produced using less than 6.6