MBE growth challenges of quantum dot saturable absorbers integrated into a MIXSEL

摘要

VECSELs modelocked with SESAMs are promising lasers for numerous applications. The MIXSEL concept integrates both laser gain and saturable absorber regions in one epitaxially grown semiconductor structure. This enables a particularly simple cavity design: only an external output coupler is needed. In the current MIXSEL realizations, the full structure is grown in one single growth run. This rises a number of epitaxial growth challenges, which we discuss in this paper.