＞8W GaInNAs VECSEL Emitting at 615 nm

摘要

We report a high-power VECSEL emitting ＞8W around 615 nm. The gain chip of the laser was grown by plasma-assisted molecular beam epitaxy and it comprised 10 GalnNAs quantum wells. The VECSEL cavity had a V-shaped geometry and a 10-mm-long non-critically phase-matched LBO crystal for second harmonic generation. The cavity incorporated also an etalon and a birefringent filter for controlling the output wavelength. With the aid of the second-harmonic output and the infrared light leaking out from the laser cavity, the single-pass conversion efficiency of the crystal was estimated to have a value of 0.75%.