Linearity of the Photocurrent Response with Light Intensity for Silicon PIN Photodiode Array

摘要

The photosensitivity linearity of a back-illuminated, pin photodiode arrays built on 75-μm thick single silicon dies is discussed. Photosensitivity linearity measurements were performed in the range of input light fluxes above ～lnW/pixel and the linearity was found to be better than 0.01% within the spectral range from 450 to 1000 nm. For lower light fluxes, the non-linearity of the photo-sensitivity was smaller than the noise current of the array pixels and different methods should be applied to measure the photosensitivity linearity with an accuracy of better than 0.1%. The theoretical limits for the sensitivity linearity measurements are discussed. This work describes also the automatic probe system for opto-electrical testing of the front- and backside illuminated photodiode arrays. The system allows 100% testing of wafers and dies before die attach. The system is configured to work on wafers up to 150 mm in size or single multi-pixel dies.