首页> 外文会议>Ultimate Integration of Silicon, 2009. ULIS 2009 >Spectroscopic detection of (i) intrinsic band edge defects, and (ii) transition metal (TM) and rare earth lanthanide (REL) atom occupied states in elemental and complex oxides: A novel pathway to (i) device reliability and (ii) increased functionality in
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Spectroscopic detection of (i) intrinsic band edge defects, and (ii) transition metal (TM) and rare earth lanthanide (REL) atom occupied states in elemental and complex oxides: A novel pathway to (i) device reliability and (ii) increased functionality in

机译:光谱检测(i)本征能带边缘缺陷以及(ii)元素氧化物和复合氧化物中的过渡金属(TM)和稀土镧系元素(REL)原子占据状态:(i)器件可靠性和(ii)增加的新途径在功能

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摘要

A novel application of synchrotron soft-X-ray spectroscopy is applied to (i) the detection of intrinsic bonding defects, and (ii) partially occupied TM and REL atom valence band edge dand d- and f-states. Spectroscopic identification and correlation with electrical performance is crucial for the identification and optimization of TM/REL elemental and complex oxides for advanced ULSI devices.
机译:同步加速器软X射线光谱的一种新应用被应用于(i)检测固有键合缺陷,以及(ii)部分占据TM和REL原子价带边缘d和f状态。光谱识别以及与电气性能的关联对于高级ULSI器件的TM / REL元素氧化物和复合氧化物的识别和优化至关重要。

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