A fast overcurrent protection scheme for IGBT modules through dynamic fault current evaluation

摘要

This paper presents a new active overcurrent protection scheme for IGBT modules based on the evaluation of fault current level by measuring the induced voltage across the stray inductance between the Kelvin emitter and power emitter of IGBT modules. Compared with the commonly used desaturation protection, it provides a fast and reliable detection of fault current without any blanking time. Once a short circuit is detected, a current limiting and clamping function is activated to dynamically suppress the transient peak current, thus reducing the considerable energetic and thermal stresses induced upon the power device. Subsequently, a soft turn-off mechanism is employed aiming to reduce surge voltages induced by stray inductance under high current falling rate. Moreover, the proposed method provides flexible protection modes, which overcome the interruption of converter operation in the event of momentary short circuits. The feasibility and effectiveness of the proposed approach have been validated by simulation results with real component models in Saber. A Double Pulse Tester (DPT) based experimental test setup further verifies the proposed protection scheme.