Femtosecond optical time-of-flight measurement of the electron velocity in GaN

摘要

A femtosecond optically-detected time-of-flight technique has been used to determine the electron transit time and steady-state velocity-field characteristic in a GaN p-i-n diode. The peak electron velocity of 1.9xl0~7 cm/sec is attained at 225 kV/cm.