首页> 外文会议>TMS(The Minerals, Metals amp; Materials Society) Annual Meeting; 20050213-17; San Francisco, CA(US) >THE EFFECT OF POST-ANNEALING ON BARIUM STRONTIUM TITANATE FILMS DEPOSITED BY RADIO FREQUENCY MAGNETRON SPUTTERING
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THE EFFECT OF POST-ANNEALING ON BARIUM STRONTIUM TITANATE FILMS DEPOSITED BY RADIO FREQUENCY MAGNETRON SPUTTERING

机译:后退火对射频磁控溅射沉积钛酸锶钡薄膜的影响

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摘要

Barium strontium titanate (BST) films were deposited on thermally oxidized Si wafers using radio frequency (RF) magnetron sputtering at substrate temperature of 673K. The effects of electric furnace annealing and rapid thermal annealing on the structures, the composition distributions and the morphologies of the films have been investigated. The structures and the compositions are analyzed using grazing X-ray diffraction (GXRD) and X-ray photoelectron spectroscopy (XPS), respectively. The morphologies are observed by atomic force microscopy (AFM). XPS shows that the films exhibit uniform composition distributions. GXRD indicates that a critical annealing temperature of approximately 723K corresponds to the appearance of crystallization. An increasing annealing temperature corresponds to an enhancing crystallization. An optimum annealing temperature of 873K corresponds to an appropriate crystallization, causing smooth and dense structure. Meanwhile, the electric furnace annealed films show (110) preferred orientation. However, at the same annealing temperature rapid thermal annealing in Ar/O_2 (1:1) ambient corresponds to better-crystallized films with smoother and denser structure than electric furnace annealing. The crystal grain shows an average size of 20-30nm and grows along (111) orientation preferentially.
机译:使用射频(RF)磁控管溅射在673K的衬底温度下,将钛酸锶钡(BST)膜沉积在热氧化的硅晶片上。研究了电炉退火和快速热退火对薄膜的结构,组成分布和形貌的影响。分别使用掠射X射线衍射(GXRD)和X射线光电子能谱(XPS)分析结构和组成。通过原子力显微镜(AFM)观察形态。 XPS表明该膜表现出均匀的组成分布。 GXRD表明,大约723K的临界退火温度对应于结晶的出现。升高的退火温度对应于增强的结晶。最佳退火温度873K对应于适当的结晶,从而导致结构光滑致密。同时,电炉退火膜表现出优选的取向(110)。然而,在相同的退火温度下,与电炉退火相比,在Ar / O_2(1:1)环境中进行快速热退火可以得到更好结晶的薄膜,该薄膜具有更平滑,更致密的结构。晶粒的平均尺寸为20-30nm,并优先沿(111)取向生长。

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