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Synthesis of Carbide Ceramics via Reduction of Adsorbed Anions on an Activated Carbon Matrix

机译:通过还原活性炭基体上吸附的阴离子合成硬质合金陶瓷

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Current commercial processes for producing ceramic carbides require temperatures of 1400-2000 ℃ and often use extensive milling operations to produce a powder product. A process that could reduce the energy requirements of commercial carbide production could allow for these materials to be implemented in a greater number of applications. In this study, tungstate (WO_4~(2-)) and silicate (SiO_3~(2-)) anions were adsorbed onto activated carbon and converted into silicon carbide (SiC) whiskers and a mixture of tungsten and tungsten carbide (W/WC) crystals via carbothermal reduction using inert and reducing gas atmospheres at temperatures much lower than what is required by current commercial processes (950 ℃ for WAVC/W_2C and 1200 ℃ for SiC). The adsorption process was statistically-optimized via a central composite response surface analysis using DesignExpert 9. Inductive coupled plasma optical emission spectroscopy (ICP-OES) was used to measure, and optimize, adsorption efficiency while the carburization products were characterized using X-ray diffraction and scanning electron microscopy.
机译:当前用于生产碳化物的商业过程要求温度为1400-2000℃,并且经常使用大量的研磨操作来生产粉末产品。可以降低工业碳化物生产的能源需求的工艺可以使这些材料用于更多的应用中。在这项研究中,钨酸根离子(WO_4〜(2-))和硅酸根(SiO_3〜(2-))吸附到活性炭上,并转化为碳化硅(SiC)晶须以及钨和碳化钨的混合物(W / WC)。 )通过碳热还原使用惰性气体和还原性气体气氛还原晶体,温度远低于目前的商业流程(WAVC / W_2C为950℃,SiC为1200℃)。通过使用DesignExpert 9的中央复合响应表面分析对吸附过程进行了统计优化,使用电感耦合等离子体发射光谱(ICP-OES)来测量和优化吸附效率,同时使用X射线衍射表征渗碳产物和扫描电子显微镜。

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