Influence of Oxygen Content on the Wettability of Silicon on Graphite

摘要

The wettability behavior of graphite with silicon is a key factor for its application as a crucible in silicon making industry. A previous study was carried out to determine the correlation between the physico-chemical behaviors of different types of graphite and the final contact angle for the graphite/silicon system. In this study, experimental vacuum annealing treatment by varying the exposure time at high temperature of 1000 ℃ processed by X-ray photoelectron spectroscopy and SEM analyses enabled to found a correlation between the oxygen content in the graphite and the final contact angle for the graphite/silicon system. Finally, the experimental results with and without vacuum annealing treatment have shown that a deep infiltration of silicon inside the graphite occurs in case of high level of oxygen content inside the graphite's pores.