首页> 外文会议>Thirteenth European Conference on Chemical Vapor Deposition, Aug 26-31, 2001, Glyfada, Athens, Greece >(HFA)Cu · 1,5-COD as the prospective precursor for CVD-technologies: The electronic structure, thermodynamical properties and process of formation of thin copper films
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(HFA)Cu · 1,5-COD as the prospective precursor for CVD-technologies: The electronic structure, thermodynamical properties and process of formation of thin copper films

机译:(HFA)Cu·1,5-COD作为化学气相沉积技术的前身:电子结构,热力学性质和薄铜膜的形成过程

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The properties of (HFA)Cu·1,5-COD complex, being the prospective CVD-precursor for thin copper films for microelectronics, were investigated by UV (He I) photoelectron, X-ray fluorescent spectroscopy and mass-spectroscopy together with ab initio calculations in approximation of density functional theory. The detailed analysis of energy and structure of highest occupied MO's of (HFA)Cu·1,5-COD was carried out. The thermodynamical and kinetical parameters of thermolysis reaction for (HFA)Cu·1,5-COD were determined and discussed. The initial stages of growth of thin copper films on the basis of this precursor (Si_3N_4 substrates) were studied by high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy.
机译:通过紫外(He I)光电子,X射线荧光光谱和质谱以及原子吸收光谱法研究了(HFA)Cu·1,5-COD配合物的性质,该配合物是用于微电子薄膜的预期的CVD前体。密度泛函理论的近似从头算。对(HFA)Cu·1,5-COD的最高占据MO进行了能量和结构的详细分析。确定并讨论了(HFA)Cu·1,5-COD热解反应的热力学和动力学参数。通过高分辨率透射电子显微镜和X射线光电子能谱研究了基于该前体(Si_3N_4衬底)的薄铜膜生长的初始阶段。

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