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Quantum transport properties in atom-sized bridges of magnetic materials

机译:原子尺寸的磁性材料桥中的量子传输性质

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When the tip of a scanning tunneling microscope (STM) is brought into contact with a metal surface and then lifted up, the contact remains as long as the tip is lifted less than about a few nanometers from the surface, and the atom-sized bridge is formed between the STM-tip and the metal surface. Its cross section consists of a few atoms to a few tens of atoms. Conductance of the bridge is measured as a function of the stretching length of the bridge, while the tip is lifted up. A stepwise variation of the conductance is experimentally observed roughly in units of 2e~2/h[1]. In previous papers, we have investigated the effects of the electron-electron scattering on the quantum transport phenomena in the atom-sized bridge for the half-filled and non-magnetic case with the aid of the Hubbard model [2,3]. In this paper, we pay attention to magetic state changes while stretching the bridge for the case away from the half-filled case (low electron density). And we investigate the effects of the magnetic properties on the quantum transport phenomena in the atomsized bridge [4].
机译:当扫描隧道显微镜(STM)的尖端与金属表面接触然后抬起时,只要尖端从表面和原子尺寸的桥抬起不到约几纳米,接触就保持不变在STM尖端和金属表面之间形成。其横截面由几个原子到几十个原子组成。当提起尖端时,电桥的电导率根据电桥的拉伸长度进行测量。实验中观察到电导的逐步变化大致以2e〜2 / h为单位[1]。在先前的论文中,我们借助Hubbard模型[2,3]研究了电子-电子散射对半填充和非磁性情况下原子尺寸桥中量子传输现象的影响。在本文中,我们注意磁性状态的变化,同时将电桥从半填充电箱(低电子密度)拉开。并且我们研究了磁性对原子化桥中量子输运现象的影响[4]。

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