Sample preparation technique for cross-sectional transmission electron microscopy using Si substrate

摘要

Quantum not with three-dimensional quantum confinement structures fabricated on semiconducting material have excition possibilities as a quantum effect device [1-2] and there has been a interest in preparing specimens of these quantum dot structure for transmission electron microscopy (TEM) studies. There are numerous techniques for preparing cross-section specimens of semiconducting material and it becomes popular [3-4]. Unfortunately, quantum dot structure has three-dimensional quantum confinement structures and TEM observation appraise not three-dimensional structure but sample two-dimensional proejcted structure. Therefore, it need to prepare the specimen thinner than quantum dots soze to prevent form lying upon each other. In this paper, we will report new simple cross-sectional sample preparation technique utilizing Si wafer for TEM studies of quantum dot structure fabricated on GaAs substrate.