Epitaxial growth and resistance of ag on Si(111)4x1-In surfaces

摘要

We monitored the RHEED pattern continuously during Ag deposition on Si(111)4x1-In surface phase at RT and 155 K. At the initial stage of deposition at RT, the reflection spots of three-dimensional Ag particles appear at about 0.3 ML. The RHEED pattern after deposition of 15 ML of AG on Si(111)4x1-In surface phase shows spots corresponding to epitaxial soilver layer only. We also observed that with increasing deposited Ag thickness the both normal and extra 4x1 spots fade simultaneously at approximately similar rates. The present RHEED results indicate that 4x1 structure is stable with respect to the silver interaction at initial stage of deposition. During LT silver deposition we observed similar processes. In this case due to lower mobility of the Ag atoms the continuously epitaxial silver film is formed at earlier stage after deposition 3 ML of Ag.