首页> 外文会议>The Third SANKEN international symposium on advanced nanoelectronics : Devices, materials, and computing >Colossal magnetorsistance at room temperature in La_(0.8)Ba_(0.2)MnO_3 thin films
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Colossal magnetorsistance at room temperature in La_(0.8)Ba_(0.2)MnO_3 thin films

机译:La_(0.8)Ba_(0.2)MnO_3薄膜在室温下的巨大磁阻

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Recently, Mn perovskite oxides (La_(1-x)M_x)MnO_3 with M chemical bounds Ba, Ca, Sr etc...) are attracting attention due to their Colossal Magnetoresistance (CMR) phenomenon. In this study, we have noted the large magnetoresistance of (La, Ba)MnO_3 at near room temperature and have fabricated their thin films by pulsed laser deposition technique. Figure 1 shows temperature dependence of the MR effect under a magnetic field of 0.8 T in the La_(0.8)Ba_(0.2)MnO_3 bulk and films (thckness:400A, 650A, 1000A, 1300A and 3900A ) on SrTiO_3 (001) substrate. It is found that the MR effect of films is higher than that of the bulk (21
机译:近年来,Mn钙钛矿氧化物(La_(1-x)M_x)MnO_3具有M,Ba,Ca,Sr等化学键)因其巨大的磁阻(CMR)现象而引起人们的关注。在这项研究中,我们注意到(La,Ba)MnO_3在接近室温的大磁阻,并通过脉冲激光沉积技术制备了它们的薄膜。图1显示了在SrTiO_3(001)衬底上的La_(0.8)Ba_(0.2)MnO_3块体和薄膜(厚度:400A,650A,1000A,1300A和3900A)中,0.8 T磁场下MR效应的温度依赖性。发现薄膜的MR效应高于整体的MR效应(21

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