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Micro-and nano-four-point probes for surface conductivity measurements

机译:微米和纳米四点探针,用于表面电导率测量

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For measuring conductivity in microscopic reions on surfaces, we have developed micro-four-point probes in which probe spacings are from 2 to 80 #mu# m [1]. We have installed the probes on XYZ Microslide (omicron) for positioning in an UHV-SEM-MBE chamber, so that surface preparations with well-defined structures, observation of surface areas under measurements, and conductivity measurements can be carried out simultaneously. Using the probes of 8- #mu# m spacing, we have measured the conductivity of silicon surfaces at room temperature with various surface superstructures by Ag and Au adsorptions. The measurements leads the follwing two findings.
机译:为了测量表面微观离子的电导率,我们开发了微型四点探针,其中探针间距为2至80#mu#m [1]。我们已将探针安装在XYZ Microslide(微米)上,以放置在UHV-SEM-MBE腔室中,以便可以同时进行结构明确的表面准备,观察被测表面积和电导率测量。使用间隔为8##μm的探针,我们通过Ag和Au吸附测量了室温下具有各种表面超结构的硅表面的电导率。这些测量结果导致了以下两个发现。

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