Valence band splitting in Cd_((1-x))Zn_xTe epilayers

机译：Cd _（（1-x））Zn_xTe外延层的价带分裂

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We present the first experimental evidence for the breaking of the cubic symmetry in the band structure of CdZnTe epilayers deposited by metal-organic chemical vapor deposition (MOCVD). Polarized PL measurements along [110] and [110] directions were performed and the valence band splitting (VBS) was determined. Growth conditions (growth temperature and partial pressure ratio) and type and misorientation of the substrates are correlated to the VBS of Cd_(1-x)Zn_xTe epilayers.

机译：我们提供了打破金属对称化学气相沉积（MOCVD）沉积的CdZnTe外延层的能带结构中的立方对称性的第一个实验证据。进行了沿[110]和[110]方向的极化PL测量，并确定了价带分裂（VBS）。衬底的生长条件（生长温度和分压比），类型和取向错误与Cd_（1-x）Zn_xTe外延层的VBS相关。

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来源
《Thin films epitaxial growth and nanostructures》|1998年|p.205-207|共3页
会议地点 Strasbourg(FR)
作者
K. Cohen; R. Beserman; S. Stolyarova; R. Weil; Y. Nemirovsky;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
CdZnTe; Polarized PL; Valence band splitting;

机译：CdZnTe;极化PL;价带分裂;

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Valence band splitting in Cd_((1-x))Zn_xTe epilayers

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