Top-Contact Organic Thin-Film Transistors Fabricated by Picoliter and Sub-Femtoliter Inkjets

摘要

Employing inkjet technologies with picoliter and sub-femtoliter droplet volumes, we have successfully manufactured high-quality top-contact organic thin-film transistors. Silver fine lines were directly patterned by two inkjet systems on the pentacene channel layer without the need for any photolithographic pre patterning or any surface pretreatment. The lines were calcinated at 130 ℃ to form source and drain electrodes. The minimum width of silver lines was 25 μm with the picoliter inkjet system, while that was 2μm with the sub-femtoliter inkjet system. We have manufactured p-type channel and n-type channel organic transistors with source/drain contacts prepared by the sub-femtoliter inkjet to fabricate complimentary inverter circuits.