Department of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul, 151-742, Korea;
Department of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul, 151-742, Korea;
Digital Display Research Laboratory, LG Electronics Inc., 16 Woomyeon-dong, Seocho-gu, Seoul 137-724, Korea;
Digital Display Research Laboratory, LG Electronics Inc., 16 Woomyeon-dong, Seocho-gu, Seoul 137-724, Korea;
Digital Display Research Laboratory, LG Electronics Inc., 16 Woomyeon-dong, Seocho-gu, Seoul 137-724, Korea;
Department of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul, 151-742, Korea;
机译:阈值 - 电压补偿像素中具有自对准顶栅结构的InGaZno TFT的正偏压不稳定性
机译:偏置温度应力(BTS)下a-Si:H体TFT(BT-TFT)和浮置(FB-TFT)的比较不稳定性分析
机译:非晶In-Ga-Zn-O双栅极TFT:电流-电压特性和电应力不稳定性
机译:电气应力测试下基于氧化物的顶栅TFT的不稳定行为
机译:基于化合物半导体原生氧化物的技术,用于使用MOCVD在砷化镓衬底上生长的光学和电气设备。
机译:手动应力测试应力超声波和3D应力MRI在慢性机械踝关节不稳定的临床评价
机译:低温(<200ºC)处理的顶栅微晶硅TFT
机译:高热流密度和应力梯度下电阻与CmC应力 - 应变和断裂行为的相关性。