Hall measurements on low mobility materials and high resistivity materials

摘要

The Hall effect is a primary method to measure carrier density, mobility and carrier type in semiconducting materials. Many contemporary semiconductor and electronic materials being developed for green energy, efficient lighting, flexible inexpensive electronics and high power devices are characterized by very low mobilities . For a traditional DC field Hall system, mobilities of less than 10 cm~2/(Vs) become very difficult to measure with magnetic fields on the order of 1 T. This paper examines an AC field Hall measurement methodology that allows one to measure Hall mobilities down to 0.001 cm /(Vs)-lower than possible using traditional DC field Hall measurement techniques. The first section of this paper is a review of the DC method, followed by the introduction of the AC method. AC field measurements of microcrystalline Si and ZnO are presented.