Preparation and Characterization of 100-oriented diamond films by HFCVD

摘要

In this paper we report high quality [100]-oriented diamond films prepared by HFCVD using hydrogen as carrier gas and C_2H_5OH as carbon source for the first time. The surface morphology observed by SEM showed polycrystalline diamond films with [100] faced structure with an average grain size of ～20 μm. The Raman spectrum indicated sp~3 bonding with a sharp peak at 1333 cm~(-1).The Ⅰ-Ⅴ characteristics obtained via Au contact were determined by semiconductor characterization system. The electrical resistivity of HFCVD [100]-oriented diamond film was ～3.0x10~(10)Ω·cm. The capacitance and dielectric loss of films were very small with the value of 2.0pF and 0.02, respectively, and almost had no dependence with the change of frequency in high frequencies.